Edge structures and properties of triangular antidots in single-layer MoS2

Handle URI:
http://hdl.handle.net/10754/622023
Title:
Edge structures and properties of triangular antidots in single-layer MoS2
Authors:
Gan, Li Yong; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Yao, Yingbang; Zhao, Yong; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Huang, Wei
Abstract:
Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Advanced Nanofabrication and Thin Film Core Lab; Imaging and Characterization Core Lab
Citation:
Gan L-Y, Cheng Y, Schwingenschlögl U, Yao Y, Zhao Y, et al. (2016) Edge structures and properties of triangular antidots in single-layer MoS2. Applied Physics Letters 109: 091603. Available: http://dx.doi.org/10.1063/1.4962132.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
30-Aug-2016
DOI:
10.1063/1.4962132
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
This work was supported by the National Natural Science Foundation of China (Nos. 11504303, 11504169, 61575094, and 61136003), the National Basic Research Program of China (2015CB932200), the Fundamental Research Funds for the Central Universities (SWJTU2682016ZDPY10), and the Synergetic Innovation Center for Organic Electronics and Information Displays. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://aip.scitation.org/doi/full/10.1063/1.4962132
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGan, Li Yongen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorYao, Yingbangen
dc.contributor.authorZhao, Yongen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorHuang, Weien
dc.date.accessioned2016-12-15T08:40:34Z-
dc.date.available2016-12-15T08:40:34Z-
dc.date.issued2016-08-30en
dc.identifier.citationGan L-Y, Cheng Y, Schwingenschlögl U, Yao Y, Zhao Y, et al. (2016) Edge structures and properties of triangular antidots in single-layer MoS2. Applied Physics Letters 109: 091603. Available: http://dx.doi.org/10.1063/1.4962132.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4962132en
dc.identifier.urihttp://hdl.handle.net/10754/622023-
dc.description.abstractDensity functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.en
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (Nos. 11504303, 11504169, 61575094, and 61136003), the National Basic Research Program of China (2015CB932200), the Fundamental Research Funds for the Central Universities (SWJTU2682016ZDPY10), and the Synergetic Innovation Center for Organic Electronics and Information Displays. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/full/10.1063/1.4962132en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gan, Li-Yong, Yingchun Cheng, Udo Schwingenschlögl, Yingbang Yao, Yong Zhao, Xi-xiang Zhang, and Wei Huang. "Edge structures and properties of triangular antidots in single-layer MoS2." Applied Physics Letters 109, no. 9 (2016): 091603 and may be found at http://aip.scitation.org/doi/full/10.1063/1.4962132.en
dc.titleEdge structures and properties of triangular antidots in single-layer MoS2en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKey Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, Chinaen
dc.contributor.institutionKey Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, Chinaen
dc.contributor.institutionSchool of Materials and Energy, Guangdong University of Technology, Guangdong 510006, Chinaen
dc.contributor.institutionSchool of Physical Science and Technology, Southwest Jiaotong University, Chengdu, 610031 Sichuan, Chinaen
kaust.authorSchwingenschlögl, Udoen
kaust.authorYao, Yingbangen
kaust.authorZhang, Xixiangen
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