Profilometry of thin films on rough substrates by Raman spectroscopy

Handle URI:
http://hdl.handle.net/10754/621968
Title:
Profilometry of thin films on rough substrates by Raman spectroscopy
Authors:
Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf, Stefaan ( 0000-0003-1619-9061 ) ; Ballif , Christophe; Fejfar, Antonín
Abstract:
Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.
KAUST Department:
King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
Citation:
Ledinský M, Paviet-Salomon B, Vetushka A, Geissbühler J, Tomasi A, et al. (2016) Profilometry of thin films on rough substrates by Raman spectroscopy. Scientific Reports 6: 37859. Available: http://dx.doi.org/10.1038/srep37859.
Publisher:
Springer Nature
Journal:
Scientific Reports
Issue Date:
6-Dec-2016
DOI:
10.1038/srep37859
Type:
Article
ISSN:
2045-2322
Sponsors:
This work was supported by the Czech Science Foundation Project 14–15357S and by the Czech Ministry of Education, Youth and Sports Project LM2015087, by the Swiss Commission for Technology and Innovation under Grant 17705.1, and by Meyer Burger Research. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Finally, partial support of the H2020-LCE project H2020-LCE (no. 727523) is acknowledged.
Additional Links:
http://www.nature.com/articles/srep37859
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorLedinský, Martinen
dc.contributor.authorPaviet-Salomon, Bertranden
dc.contributor.authorVetushka, Aliakseien
dc.contributor.authorGeissbühler, Jonasen
dc.contributor.authorTomasi, Andreaen
dc.contributor.authorDespeisse, Matthieuen
dc.contributor.authorDe Wolf, Stefaanen
dc.contributor.authorBallif , Christopheen
dc.contributor.authorFejfar, Antonínen
dc.date.accessioned2016-12-07T13:44:33Z-
dc.date.available2016-12-07T13:44:33Z-
dc.date.issued2016-12-06en
dc.identifier.citationLedinský M, Paviet-Salomon B, Vetushka A, Geissbühler J, Tomasi A, et al. (2016) Profilometry of thin films on rough substrates by Raman spectroscopy. Scientific Reports 6: 37859. Available: http://dx.doi.org/10.1038/srep37859.en
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep37859en
dc.identifier.urihttp://hdl.handle.net/10754/621968-
dc.description.abstractThin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.en
dc.description.sponsorshipThis work was supported by the Czech Science Foundation Project 14–15357S and by the Czech Ministry of Education, Youth and Sports Project LM2015087, by the Swiss Commission for Technology and Innovation under Grant 17705.1, and by Meyer Burger Research. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Finally, partial support of the H2020-LCE project H2020-LCE (no. 727523) is acknowledged.en
dc.publisherSpringer Natureen
dc.relation.urlhttp://www.nature.com/articles/srep37859en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectSolar cellsen
dc.subjectSurfaces, interfaces and thin filmsen
dc.subjectTwo-dimensional materialsen
dc.titleProfilometry of thin films on rough substrates by Raman spectroscopyen
dc.typeArticleen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabiaen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLaboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague, Czech Republicen
dc.contributor.institutionPV-Center, Centre Suisse d’Électronique et de Microtechnique, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerlanden
dc.contributor.institutionÉcole Polytechnique Fédérale de Lausanne (EPFL), Institute of microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b, CH-2000 Neuchâtel, Switzerlanden
kaust.authorDe Wolf, Stefaanen
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