Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

Handle URI:
http://hdl.handle.net/10754/621925
Title:
Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals
Authors:
Kozawa, Daichi; Pu, Jiang; Shimizu, Ryo; Kimura, Shota; Chiu, Ming-Hui; Matsuki, Keiichiro; Wada, Yoshifumi; Sakanoue, Tomo; Iwasa, Yoshihiro; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Takenobu, Taishi
Abstract:
Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Kozawa D, Pu J, Shimizu R, Kimura S, Chiu M-H, et al. (2016) Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals. Applied Physics Letters 109: 201107. Available: http://dx.doi.org/10.1063/1.4967173.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
16-Nov-2016
DOI:
10.1063/1.4967173
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
D.K. acknowledges the support of the Grant-in-Aid for Encouragement of Young Scientists (B) (JSPS KAKENHI Grant No. JP 16K17485) from Japan Society for the Promotion of Science (JSPS). Y.W., J.P., and K.M. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University, from JSPS. D.K. and J.P. were supported by the Grant-in-Aid for JSPS Fellows (JSPS KAKENHI Grant Nos. JP 15J07423 and JP 14J07485). T.S. is grateful to the Grant-in-Aid for Encouragement of Young Scientists (A) (JSPS KAKENHI Grant No. JP 26706012) from JSPS. T.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers from JSPS, and Grants-in-Aid from MEXT (JSPS KAKENHI Grant Nos. JP 16K13618, JP 26102012 “π-System Figuration,” and JP 25000003 “Specially Promoted Research”).
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/109/20/10.1063/1.4967173
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKozawa, Daichien
dc.contributor.authorPu, Jiangen
dc.contributor.authorShimizu, Ryoen
dc.contributor.authorKimura, Shotaen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorMatsuki, Keiichiroen
dc.contributor.authorWada, Yoshifumien
dc.contributor.authorSakanoue, Tomoen
dc.contributor.authorIwasa, Yoshihiroen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorTakenobu, Taishien
dc.date.accessioned2016-12-04T13:43:56Z-
dc.date.available2016-12-04T13:43:56Z-
dc.date.issued2016-11-16en
dc.identifier.citationKozawa D, Pu J, Shimizu R, Kimura S, Chiu M-H, et al. (2016) Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals. Applied Physics Letters 109: 201107. Available: http://dx.doi.org/10.1063/1.4967173.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4967173en
dc.identifier.urihttp://hdl.handle.net/10754/621925-
dc.description.abstractTransition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.en
dc.description.sponsorshipD.K. acknowledges the support of the Grant-in-Aid for Encouragement of Young Scientists (B) (JSPS KAKENHI Grant No. JP 16K17485) from Japan Society for the Promotion of Science (JSPS). Y.W., J.P., and K.M. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University, from JSPS. D.K. and J.P. were supported by the Grant-in-Aid for JSPS Fellows (JSPS KAKENHI Grant Nos. JP 15J07423 and JP 14J07485). T.S. is grateful to the Grant-in-Aid for Encouragement of Young Scientists (A) (JSPS KAKENHI Grant No. JP 26706012) from JSPS. T.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers from JSPS, and Grants-in-Aid from MEXT (JSPS KAKENHI Grant Nos. JP 16K13618, JP 26102012 “π-System Figuration,” and JP 25000003 “Specially Promoted Research”).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/20/10.1063/1.4967173en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titlePhotodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystalsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japanen
dc.contributor.institutionSchool of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japanen
dc.contributor.institutionDepartment of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japanen
dc.contributor.institutionQuantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japanen
dc.contributor.institutionRIKEN Center for Emergent Matter Science, Wako 351-0198, Japanen
dc.contributor.institutionKagami Memorial Laboratory, Waseda University, Shinjuku, Tokyo 169-0051, Japanen
kaust.authorChiu, Ming-Huien
kaust.authorLi, Lain-Jongen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.