Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

Handle URI:
http://hdl.handle.net/10754/621892
Title:
Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 )
Abstract:
With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We report a process for fabricating through polymer vias (TPVs) facilitating the fabrication of sensor arrays and control electronics on the opposite sides of the same flexible polymer. Finally, we present a process to fabricate stretchable metallic thin films with up to 800% stretchability, and report two distinct applications for these devices which cannot be done using current techniques.
Advisors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Committee Member:
Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Al-Naffouri, Tareq Y.; Li, Xiaohang ( 0000-0002-4434-365X ) ; Ma, Zhenqiang
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Program:
Electrical Engineering
Issue Date:
Dec-2016
Type:
Dissertation
Appears in Collections:
Dissertations

Full metadata record

DC FieldValue Language
dc.contributor.advisorHussain, Muhammad Mustafaen
dc.contributor.authorHussain, Aftab M.en
dc.date.accessioned2016-11-29T07:36:14Z-
dc.date.available2016-11-29T07:36:14Z-
dc.date.issued2016-12-
dc.identifier.urihttp://hdl.handle.net/10754/621892-
dc.description.abstractWith the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We report a process for fabricating through polymer vias (TPVs) facilitating the fabrication of sensor arrays and control electronics on the opposite sides of the same flexible polymer. Finally, we present a process to fabricate stretchable metallic thin films with up to 800% stretchability, and report two distinct applications for these devices which cannot be done using current techniques.en
dc.language.isoenen
dc.subjectSilicon-tinen
dc.subject3D integrationen
dc.subjectStretchable electronicsen
dc.subjectThrough silicon vias (TSVs)en
dc.subjectStretchable antennaen
dc.subjectSmart thermal patchen
dc.titleExtending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologiesen
dc.typeDissertationen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberSchwingenschlögl, Udoen
dc.contributor.committeememberAl-Naffouri, Tareq Y.en
dc.contributor.committeememberLi, Xiaohangen
dc.contributor.committeememberMa, Zhenqiangen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.nameDoctor of Philosophyen
dc.person.id118439en
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