Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

Handle URI:
http://hdl.handle.net/10754/621878
Title:
Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications
Authors:
Wang, Jer-Chyi; Chang, Kai-Ping; Lin, Chih-Ting; Su, Ching-Yuan; Güneş, Fethullah; Boutchich, Mohamed; Chen, Chang-Hsiao; Chen, Ching-Hsiang; Chen, Ching-Shiun; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Lai, Chao-Sung
Abstract:
Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wang J-C, Chang K-P, Lin C-T, Su C-Y, Güneş F, et al. (2016) Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications. Carbon. Available: http://dx.doi.org/10.1016/j.carbon.2016.11.063.
Publisher:
Elsevier BV
Journal:
Carbon
Issue Date:
23-Nov-2016
DOI:
10.1016/j.carbon.2016.11.063
Type:
Article
ISSN:
0008-6223
Sponsors:
This research was supported by the Ministry of Science and Technology (MOST), R.O.C. under the Contract Nos. of MOST 103-2221-E-182-061-MY3, MOST 104-2221-E-182-041, MOST 104-2632-E-182-001, MOST 105-2628-E-182-001-MY3, and MOST 105-2632-E-182-001, and Chang Gung Memorial Hospital, R.O.C., under the Contract Nos. of CMRPD2D0072, CMRPD3D0112, CMRPD2E0031, CMRPD2F0121 and BMRPA74. MB and FG would like to thank the CNRS and the French Ministère des Affaires Etrangères et Européennes for their financial support through the ICT-ASIA programme (3226/DGM/ATT/RECH).
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0008622316310375
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Jer-Chyien
dc.contributor.authorChang, Kai-Pingen
dc.contributor.authorLin, Chih-Tingen
dc.contributor.authorSu, Ching-Yuanen
dc.contributor.authorGüneş, Fethullahen
dc.contributor.authorBoutchich, Mohameden
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorChen, Ching-Hsiangen
dc.contributor.authorChen, Ching-Shiunen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorLai, Chao-Sungen
dc.date.accessioned2016-11-24T13:47:30Z-
dc.date.available2016-11-24T13:47:30Z-
dc.date.issued2016-11-23en
dc.identifier.citationWang J-C, Chang K-P, Lin C-T, Su C-Y, Güneş F, et al. (2016) Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications. Carbon. Available: http://dx.doi.org/10.1016/j.carbon.2016.11.063.en
dc.identifier.issn0008-6223en
dc.identifier.doi10.1016/j.carbon.2016.11.063en
dc.identifier.urihttp://hdl.handle.net/10754/621878-
dc.description.abstractGraphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.en
dc.description.sponsorshipThis research was supported by the Ministry of Science and Technology (MOST), R.O.C. under the Contract Nos. of MOST 103-2221-E-182-061-MY3, MOST 104-2221-E-182-041, MOST 104-2632-E-182-001, MOST 105-2628-E-182-001-MY3, and MOST 105-2632-E-182-001, and Chang Gung Memorial Hospital, R.O.C., under the Contract Nos. of CMRPD2D0072, CMRPD3D0112, CMRPD2E0031, CMRPD2F0121 and BMRPA74. MB and FG would like to thank the CNRS and the French Ministère des Affaires Etrangères et Européennes for their financial support through the ICT-ASIA programme (3226/DGM/ATT/RECH).en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0008622316310375en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Carbon. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Carbon, 23 November 2016. DOI: 10.1016/j.carbon.2016.11.063en
dc.titleIntegration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applicationsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalCarbonen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Electronic Engineering, Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwanen
dc.contributor.institutionDepartment of Neurosurgery, Chang Gung Memorial Hospital, Guishan Dist., 33305, Taoyuan, Taiwanen
dc.contributor.institutionCenter for Reliability Sciences & Technologies (CREST), Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwanen
dc.contributor.institutionDepartment of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., 24301, New Taipei City, Taiwanen
dc.contributor.institutionDepartment of Mechanical Engineering, National Central University, Jhongli Dist., 32001, Taoyuan, Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering, Izmir Kâtip Çelebi University, Cigli Main Campus, Izmir, 35620, Turkeyen
dc.contributor.institutionGeePs, CNRS UMR8507 Centrale Supelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 Rue Joliot-Curie, Plateau de Moulon, Gif-sur-Yvette, 91192, Cedex, Franceen
dc.contributor.institutionDepartment of Automatic Control Engineering, Feng Chia University, Seatwen Dist., Taichung, 40724, Taiwanen
dc.contributor.institutionSustainable Energy Development Center, National Taiwan University of Science and Technology, Taipei, 10607, Taiwanen
dc.contributor.institutionCenter for General Education, Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwanen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwanen
dc.contributor.institutionDepartment of Nephrology, Chang Gung Memorial Hospital, Guishan Dist., 33305, Taoyuan, Taiwanen
dc.contributor.institutionDepartment of Materials Engineering, Ming Chi University of Technology, Taishan Dist., 24301, New Taipei City, Taiwanen
kaust.authorLi, Lain-Jongen
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