Solid-state Memory on Flexible Silicon for Future Electronic Applications

Handle URI:
http://hdl.handle.net/10754/621864
Title:
Solid-state Memory on Flexible Silicon for Future Electronic Applications
Authors:
Ghoneim, Mohamed ( 0000-0002-5568-5284 )
Abstract:
Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion write-erase cycles) values for flexible FeRAMs, uncompromised retention ability under varying dynamic stress, and a minimum bending radius of 5 mm, and (vi) the combined effect of 225 °C, 260 MPa tensile stress, 55% humidity under ambient conditions (21% oxygen), led to 48% reduction in switching coercive fields, 45% reduction in remnant polarization, an expected increase of 22% in relative permittivity and normalized capacitance, and reduced memory window (20% difference between switching and non-switching currents at 225 °C).
Advisors:
Hussain, Muhammad M. ( 0000-0003-3279-0441 )
Committee Member:
Manchon, Aurelien ( 0000-0002-4768-293X ) ; Merzaban, Jasmeen ( 0000-0002-7276-2907 ) ; Clarke, David
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Program:
Electrical Engineering
Issue Date:
Nov-2016
Type:
Dissertation
Appears in Collections:
Dissertations

Full metadata record

DC FieldValue Language
dc.contributor.advisorHussain, Muhammad M.en
dc.contributor.authorGhoneim, Mohameden
dc.date.accessioned2016-11-23T06:06:44Z-
dc.date.available2016-11-23T06:06:44Z-
dc.date.issued2016-11-
dc.identifier.urihttp://hdl.handle.net/10754/621864-
dc.description.abstractAdvancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion write-erase cycles) values for flexible FeRAMs, uncompromised retention ability under varying dynamic stress, and a minimum bending radius of 5 mm, and (vi) the combined effect of 225 °C, 260 MPa tensile stress, 55% humidity under ambient conditions (21% oxygen), led to 48% reduction in switching coercive fields, 45% reduction in remnant polarization, an expected increase of 22% in relative permittivity and normalized capacitance, and reduced memory window (20% difference between switching and non-switching currents at 225 °C).en
dc.language.isoenen
dc.subjectFlexible electronicsen
dc.subjectReliabilityen
dc.subjectMemoryen
dc.subjectFinFETsen
dc.subjectFerroelectricen
dc.subjectStressen
dc.titleSolid-state Memory on Flexible Silicon for Future Electronic Applicationsen
dc.typeDissertationen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberManchon, Aurelienen
dc.contributor.committeememberMerzaban, Jasmeenen
dc.contributor.committeememberClarke, Daviden
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.nameDoctor of Philosophyen
dc.person.id117936en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.