Light-induced performance increase of silicon heterojunction solar cells

Handle URI:
http://hdl.handle.net/10754/621851
Title:
Light-induced performance increase of silicon heterojunction solar cells
Authors:
Kobayashi, Eiji; De Wolf, Stefaan ( 0000-0003-1619-9061 ) ; Levrat, Jacques; Christmann, Gabriel; Descoeudres, Antoine; Nicolay, Sylvain; Despeisse, Matthieu; Watabe, Yoshimi; Ballif, Christophe
Abstract:
Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC); King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
Citation:
Kobayashi E, De Wolf S, Levrat J, Christmann G, Descoeudres A, et al. (2016) Light-induced performance increase of silicon heterojunction solar cells. Applied Physics Letters 109: 153503. Available: http://dx.doi.org/10.1063/1.4964835.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
11-Oct-2016
DOI:
10.1063/1.4964835
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The authors gratefully acknowledge Jan Haschke, Silvia Martin de Nicolas, Raphaël Monnard, Jean Cattin, Andrea Tomasi, Gizem Nogay, Andrea Ingenito, Philipp Löper, Franz-Josef Haug, Philipp Wyss, Josua Stuckelberger, Jonathan Champliaud, and Christophe Allebé for fruitful discussions. Financial support of Swiss Federal Office of Energy, EU FP7 program (CHETAAH Project, Contract No. 609788), and King Abdullah University of Science and Technology (KAUST) is acknowledged.
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/109/15/10.1063/1.4964835
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)

Full metadata record

DC FieldValue Language
dc.contributor.authorKobayashi, Eijien
dc.contributor.authorDe Wolf, Stefaanen
dc.contributor.authorLevrat, Jacquesen
dc.contributor.authorChristmann, Gabrielen
dc.contributor.authorDescoeudres, Antoineen
dc.contributor.authorNicolay, Sylvainen
dc.contributor.authorDespeisse, Matthieuen
dc.contributor.authorWatabe, Yoshimien
dc.contributor.authorBallif, Christopheen
dc.date.accessioned2016-11-21T13:49:24Z-
dc.date.available2016-11-21T13:49:24Z-
dc.date.issued2016-10-11en
dc.identifier.citationKobayashi E, De Wolf S, Levrat J, Christmann G, Descoeudres A, et al. (2016) Light-induced performance increase of silicon heterojunction solar cells. Applied Physics Letters 109: 153503. Available: http://dx.doi.org/10.1063/1.4964835.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4964835en
dc.identifier.urihttp://hdl.handle.net/10754/621851-
dc.description.abstractSilicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.en
dc.description.sponsorshipThe authors gratefully acknowledge Jan Haschke, Silvia Martin de Nicolas, Raphaël Monnard, Jean Cattin, Andrea Tomasi, Gizem Nogay, Andrea Ingenito, Philipp Löper, Franz-Josef Haug, Philipp Wyss, Josua Stuckelberger, Jonathan Champliaud, and Christophe Allebé for fruitful discussions. Financial support of Swiss Federal Office of Energy, EU FP7 program (CHETAAH Project, Contract No. 609788), and King Abdullah University of Science and Technology (KAUST) is acknowledged.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/15/10.1063/1.4964835en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleLight-induced performance increase of silicon heterojunction solar cellsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabiaen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionÉcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b, CH-2002 Neuchâtel, Switzerlanden
dc.contributor.institutionChoshu Industry Co., Ltd., 3740, Shin-yamanoi, Sanyo Onoda, Yamaguchi 757-8511, Japanen
dc.contributor.institutionDepartment of Materials Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japanen
dc.contributor.institutionCSEM PV-Center, Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerlanden
kaust.authorDe Wolf, Stefaanen
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