Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Handle URI:
http://hdl.handle.net/10754/621848
Title:
Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure
Authors:
He, Xin ( 0000-0001-7009-2826 ) ; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng ( 0000-0001-8633-9045 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; KAUST Supercomputing Laboratory (KSL)
Citation:
He X, Li H, Zhu Z, Dai Z, Yang Y, et al. (2016) Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure. Applied Physics Letters 109: 173105. Available: http://dx.doi.org/10.1063/1.4966218.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
27-Oct-2016
DOI:
10.1063/1.4966218
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). H. Li acknowledges financial support from the National Natural Science Foundation of China (Grant No. 21571101), Specially Appointed Professors by Universities in Jiangsu Province, and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 15KJB430016).
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/109/17/10.1063/1.4966218
Appears in Collections:
Articles; KAUST Supercomputing Laboratory (KSL); Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHe, Xinen
dc.contributor.authorLi, Haien
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorDai, Zhenyuen
dc.contributor.authorYang, Yangen
dc.contributor.authorYang, Pengen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorLi, Pengen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2016-11-21T09:15:11Z-
dc.date.available2016-11-21T09:15:11Z-
dc.date.issued2016-10-27en
dc.identifier.citationHe X, Li H, Zhu Z, Dai Z, Yang Y, et al. (2016) Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure. Applied Physics Letters 109: 173105. Available: http://dx.doi.org/10.1063/1.4966218.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4966218en
dc.identifier.urihttp://hdl.handle.net/10754/621848-
dc.description.abstractMechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). H. Li acknowledges financial support from the National Natural Science Foundation of China (Grant No. 21571101), Specially Appointed Professors by Universities in Jiangsu Province, and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 15KJB430016).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/17/10.1063/1.4966218en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleStrain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructureen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentKAUST Supercomputing Laboratory (KSL)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKey Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, Chinaen
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, Chinaen
kaust.authorHe, Xinen
kaust.authorLi, Haien
kaust.authorZhu, Zhiyongen
kaust.authorDai, Zhenyuen
kaust.authorYang, Pengen
kaust.authorZhang, Qiangen
kaust.authorLi, Pengen
kaust.authorSchwingenschlögl, Udoen
kaust.authorZhang, Xixiangen
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