High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications

Handle URI:
http://hdl.handle.net/10754/621653
Title:
High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications
Authors:
Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Leonard, John T.; Pourhashemi, Arash; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; El-desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.
KAUST Department:
Photonics Laboratory
Citation:
Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, et al. (2016) High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters 41: 2608. Available: http://dx.doi.org/10.1364/OL.41.002608.
Publisher:
The Optical Society
Journal:
Optics Letters
Issue Date:
25-May-2016
DOI:
10.1364/OL.41.002608
Type:
Article
ISSN:
0146-9592; 1539-4794
Sponsors:
King Abdullah University of Science and Technology (KAUST) (KAUST BAS/1/1614-01-01); King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008).
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorLeonard, John T.en
dc.contributor.authorPourhashemi, Arashen
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorSpeck, James S.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-11-03T13:21:57Z-
dc.date.available2016-11-03T13:21:57Z-
dc.date.issued2016-05-25en
dc.identifier.citationShen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, et al. (2016) High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters 41: 2608. Available: http://dx.doi.org/10.1364/OL.41.002608.en
dc.identifier.issn0146-9592en
dc.identifier.issn1539-4794en
dc.identifier.doi10.1364/OL.41.002608en
dc.identifier.urihttp://hdl.handle.net/10754/621653-
dc.description.abstractA high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.en
dc.description.sponsorshipKing Abdullah University of Science and Technology (KAUST) (KAUST BAS/1/1614-01-01); King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008).en
dc.publisherThe Optical Societyen
dc.titleHigh-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communicationsen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOptics Lettersen
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara, CA, United Statesen
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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