Multistate Resistive Switching Memory for Synaptic Memory Applications

Handle URI:
http://hdl.handle.net/10754/621633
Title:
Multistate Resistive Switching Memory for Synaptic Memory Applications
Authors:
Hota, Mrinal Kanti ( 0000-0003-4336-8051 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Wehbe, Nimer; McLachlan, Martyn A.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KAUST Department:
Materials Science and Engineering Program
Citation:
Hota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials Interfaces
Issue Date:
12-Jul-2016
DOI:
10.1002/admi.201600192
Type:
Article
ISSN:
2196-7350
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorHota, Mrinal Kantien
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorWehbe, Nimeren
dc.contributor.authorMcLachlan, Martyn A.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2016-11-03T13:21:26Z-
dc.date.available2016-11-03T13:21:26Z-
dc.date.issued2016-07-12en
dc.identifier.citationHota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.en
dc.identifier.issn2196-7350en
dc.identifier.doi10.1002/admi.201600192en
dc.identifier.urihttp://hdl.handle.net/10754/621633-
dc.description.abstractReproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen
dc.publisherWiley-Blackwellen
dc.subjectMixed oxidesen
dc.titleMultistate Resistive Switching Memory for Synaptic Memory Applicationsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalAdvanced Materials Interfacesen
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UKen
kaust.authorHota, Mrinal Kantien
kaust.authorHedhili, Mohamed N.en
kaust.authorWehbe, Nimeren
kaust.authorAlshareef, Husam N.en
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