Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

Handle URI:
http://hdl.handle.net/10754/621630
Title:
Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth
Authors:
Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Shen Y, Chen R, Yu X, Wang Q, Jungjohann KL, et al. (2016) Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth. Nano Lett 16: 4158–4165. Available: http://dx.doi.org/10.1021/acs.nanolett.6b01037.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
2-Jun-2016
DOI:
10.1021/acs.nanolett.6b01037
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
Division of Materials Research[DMR-1503595]; Division of Electrical, Communications and Cyber Systems[ECCS-1351980]
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Youdeen
dc.contributor.authorChen, Renjieen
dc.contributor.authorYu, Xuechaoen
dc.contributor.authorWang, Qijieen
dc.contributor.authorJungjohann, Katherine L.en
dc.contributor.authorDayeh, Shadi A.en
dc.contributor.authorWu, Taoen
dc.date.accessioned2016-11-03T13:21:22Z-
dc.date.available2016-11-03T13:21:22Z-
dc.date.issued2016-06-02en
dc.identifier.citationShen Y, Chen R, Yu X, Wang Q, Jungjohann KL, et al. (2016) Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth. Nano Lett 16: 4158–4165. Available: http://dx.doi.org/10.1021/acs.nanolett.6b01037.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.6b01037en
dc.identifier.urihttp://hdl.handle.net/10754/621630-
dc.description.abstractEpitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.en
dc.description.sponsorshipDivision of Materials Research[DMR-1503595]en
dc.description.sponsorshipDivision of Electrical, Communications and Cyber Systems[ECCS-1351980]en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectGibbs-Thomson effecten
dc.titleGibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growthen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singaporeen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California San Diego, San Diego, CA, United Statesen
dc.contributor.institutionSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singaporeen
dc.contributor.institutionCenter for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, United Statesen
kaust.authorWu, Taoen
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