Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

Handle URI:
http://hdl.handle.net/10754/621620
Title:
Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy
Authors:
Khan, Jafar Iqbal; Adhikari, Aniruddha ( 0000-0003-1189-9755 ) ; Sun, Jingya; Priante, Davide ( 0000-0003-4540-2188 ) ; Bose, Riya; Shaheen, Basamat; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Zhao, Chao ( 0000-0002-9582-1068 ) ; Bakr, Osman M. ( 0000-0002-3428-1002 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Mohammed, Omar F. ( 0000-0001-8500-1130 )
Abstract:
Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Photonics Laboratory
Citation:
Khan JI, Adhikari A, Sun J, Priante D, Bose R, et al. (2016) Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. Small 12: 2313–2320. Available: http://dx.doi.org/10.1002/smll.201503651.
Publisher:
Wiley-Blackwell
Journal:
Small
Issue Date:
3-Mar-2016
DOI:
10.1002/smll.201503651
Type:
Article
ISSN:
1613-6810
Sponsors:
J.I.K. and A. A. contributed equally to this work. The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). The authors gratefully acknowledge the funding support from KAUST and King Abdul-Aziz City for Science and Technology TIC (Technology Innovation Center) for Solid-State Lighting at KAUST. T.K.N. and B.S.O. gratefully acknowledge contribution from Prof. Pallab Bhattacharya, University of Michigan, Ann Arbor. T.K.N. and D.P. gratefully acknowledge Rami T. Elafandy (Photonics Laboratory, KAUST) for his effort and assistance in scanning electron microscopy experiments.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/smll.201503651/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Jafar Iqbalen
dc.contributor.authorAdhikari, Aniruddhaen
dc.contributor.authorSun, Jingyaen
dc.contributor.authorPriante, Davideen
dc.contributor.authorBose, Riyaen
dc.contributor.authorShaheen, Basamaten
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorBakr, Osman M.en
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorMohammed, Omar F.en
dc.date.accessioned2016-11-03T13:21:06Z-
dc.date.available2016-11-03T13:21:06Z-
dc.date.issued2016-03-03en
dc.identifier.citationKhan JI, Adhikari A, Sun J, Priante D, Bose R, et al. (2016) Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. Small 12: 2313–2320. Available: http://dx.doi.org/10.1002/smll.201503651.en
dc.identifier.issn1613-6810en
dc.identifier.doi10.1002/smll.201503651en
dc.identifier.urihttp://hdl.handle.net/10754/621620-
dc.description.abstractManaging trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipJ.I.K. and A. A. contributed equally to this work. The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). The authors gratefully acknowledge the funding support from KAUST and King Abdul-Aziz City for Science and Technology TIC (Technology Innovation Center) for Solid-State Lighting at KAUST. T.K.N. and B.S.O. gratefully acknowledge contribution from Prof. Pallab Bhattacharya, University of Michigan, Ann Arbor. T.K.N. and D.P. gratefully acknowledge Rami T. Elafandy (Photonics Laboratory, KAUST) for his effort and assistance in scanning electron microscopy experiments.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/smll.201503651/fullen
dc.subject4D ultrafast microscopyen
dc.subjectCarrier recombinationen
dc.subjectCharge carrier dynamicsen
dc.subjectInGaN nanowiresen
dc.subjectPassivationen
dc.titleEnhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopyen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalSmallen
kaust.authorKhan, Jafar Iqbalen
kaust.authorAdhikari, Aniruddhaen
kaust.authorSun, Jingyaen
kaust.authorPriante, Davideen
kaust.authorBose, Riyaen
kaust.authorShaheen, Basamaten
kaust.authorNg, Tien Kheeen
kaust.authorZhao, Chaoen
kaust.authorBakr, Osman M.en
kaust.authorOoi, Boon S.en
kaust.authorMohammed, Omar F.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.