Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

Handle URI:
http://hdl.handle.net/10754/621608
Title:
Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals
Authors:
Abdelhady, Ahmed L.; Saidaminov, Makhsud I. ( 0000-0002-3850-666X ) ; Banavoth, Murali ( 0000-0002-7806-2274 ) ; Adinolfi, Valerio; Voznyy, Oleksandr; Katsiev, Khabiboulakh; Alarousu, Erkki; Comin, Riccardo; Dursun, Ibrahim ( 0000-0002-4408-3392 ) ; Sinatra, Lutfan ( 0000-0001-7034-7745 ) ; Sargent, Edward H.; Mohammed, Omar F. ( 0000-0001-8500-1130 ) ; Bakr, Osman M. ( 0000-0002-3428-1002 )
Abstract:
Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); SABIC - Corporate Research and Innovation Center (CRI) at KAUST
Citation:
Abdelhady AL, Saidaminov MI, Murali B, Adinolfi V, Voznyy O, et al. (2016) Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals. The Journal of Physical Chemistry Letters 7: 295–301. Available: http://dx.doi.org/10.1021/acs.jpclett.5b02681.
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry Letters
Issue Date:
2-Jan-2016
DOI:
10.1021/acs.jpclett.5b02681
Type:
Article
ISSN:
1948-7185
Sponsors:
The authors acknowledge the support of Awards URF/1/2268-01-01, URF/1/1741-01-01, and URF/1/1373-01-01 made by King Abdullah University of Science and Technology (KAUST). We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant KACST TIC R2-FP-008. The authors thank Y. Losovyj for XPS date collection and partial analysis, and P. Dowben for the useful discussions. Access to XPS at the Nanoscience Characterization Facility of Indiana University's Nanoscience Center was provided by the NSF (Award DMR MRI-1126394).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02681
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorAbdelhady, Ahmed L.en
dc.contributor.authorSaidaminov, Makhsud I.en
dc.contributor.authorBanavoth, Muralien
dc.contributor.authorAdinolfi, Valerioen
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorKatsiev, Khabiboulakhen
dc.contributor.authorAlarousu, Erkkien
dc.contributor.authorComin, Riccardoen
dc.contributor.authorDursun, Ibrahimen
dc.contributor.authorSinatra, Lutfanen
dc.contributor.authorSargent, Edward H.en
dc.contributor.authorMohammed, Omar F.en
dc.contributor.authorBakr, Osman M.en
dc.date.accessioned2016-11-03T08:33:14Z-
dc.date.available2016-11-03T08:33:14Z-
dc.date.issued2016-01-02en
dc.identifier.citationAbdelhady AL, Saidaminov MI, Murali B, Adinolfi V, Voznyy O, et al. (2016) Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals. The Journal of Physical Chemistry Letters 7: 295–301. Available: http://dx.doi.org/10.1021/acs.jpclett.5b02681.en
dc.identifier.issn1948-7185en
dc.identifier.doi10.1021/acs.jpclett.5b02681en
dc.identifier.urihttp://hdl.handle.net/10754/621608-
dc.description.abstractControllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.en
dc.description.sponsorshipThe authors acknowledge the support of Awards URF/1/2268-01-01, URF/1/1741-01-01, and URF/1/1373-01-01 made by King Abdullah University of Science and Technology (KAUST). We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant KACST TIC R2-FP-008. The authors thank Y. Losovyj for XPS date collection and partial analysis, and P. Dowben for the useful discussions. Access to XPS at the Nanoscience Characterization Facility of Indiana University's Nanoscience Center was provided by the NSF (Award DMR MRI-1126394).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b02681en
dc.titleHeterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystalsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUSTen
dc.identifier.journalThe Journal of Physical Chemistry Lettersen
dc.contributor.institutionDepartment of Chemistry, Faculty of Science, Mansoura University, Mansoura, Egypten
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canadaen
kaust.authorAbdelhady, Ahmed L.en
kaust.authorSaidaminov, Makhsud I.en
kaust.authorBanavoth, Muralien
kaust.authorKatsiev, Khabiboulakhen
kaust.authorAlarousu, Erkkien
kaust.authorDursun, Ibrahimen
kaust.authorSinatra, Lutfanen
kaust.authorMohammed, Omar F.en
kaust.authorBakr, Osman M.en
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