Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

Handle URI:
http://hdl.handle.net/10754/621596
Title:
Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors
Authors:
Li, Peng ( 0000-0001-8633-9045 ) ; Xia, Chuan ( 0000-0003-4526-159X ) ; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KAUST Department:
Physical Sciences and Engineering (PSE) Division; KAUST Supercomputing Laboratory (KSL)
Citation:
Li P, Xia C, Zhu Z, Wen Y, Zhang Q, et al. (2016) Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors. Advanced Functional Materials 26: 5679–5689. Available: http://dx.doi.org/10.1002/adfm.201504999.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
1-Jun-2016
DOI:
10.1002/adfm.201504999
Type:
Article
ISSN:
1616-301X
Sponsors:
National Natural Science Foundation of China[11204207]; PhD Programs Foundation of the Ministry of Education of China[20120032120074]
Appears in Collections:
Articles; KAUST Supercomputing Laboratory (KSL); Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Pengen
dc.contributor.authorXia, Chuanen
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorWen, Yanen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2016-11-03T08:32:57Z-
dc.date.available2016-11-03T08:32:57Z-
dc.date.issued2016-06-01en
dc.identifier.citationLi P, Xia C, Zhu Z, Wen Y, Zhang Q, et al. (2016) Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors. Advanced Functional Materials 26: 5679–5689. Available: http://dx.doi.org/10.1002/adfm.201504999.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201504999en
dc.identifier.urihttp://hdl.handle.net/10754/621596-
dc.description.abstractIn spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen
dc.description.sponsorshipNational Natural Science Foundation of China[11204207]en
dc.description.sponsorshipPhD Programs Foundation of the Ministry of Education of China[20120032120074]en
dc.publisherWiley-Blackwellen
dc.subjectEpitaxyen
dc.titleUltrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentKAUST Supercomputing Laboratory (KSL)en
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology; Institute of Advanced Materials Physics; Faculty of Science; Tianjin University; Tianjin 300072 P. R. Chinaen
kaust.authorLi, Pengen
kaust.authorXia, Chuanen
kaust.authorZhu, Zhiyongen
kaust.authorWen, Yanen
kaust.authorZhang, Qiangen
kaust.authorAlshareef, Husam N.en
kaust.authorZhang, Xixiangen
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