Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries

Handle URI:
http://hdl.handle.net/10754/621576
Title:
Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries
Authors:
Hung, Yu-Han; Lu, Ang-Yu; Chang, Yung-Huang; Huang, Jing-Kai; Chang, Jeng-Kuei; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Su, Ching-Yuan
Abstract:
In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)2MoS4) as the printing ink. The obtained MoS2 nanoribbons had a thickness reaching as low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (length/width) of ∼7.4 × 108 were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 °C) results in high-quality conductive samples, and field-effect transistors based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 °C) result in a unique nanocrystalline MoSx structure (x ≈ 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method. The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of ∼211 mV at 10 mA/cm2 and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx nanostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials. © 2016 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Hung Y-H, Lu A-Y, Chang Y-H, Huang J-K, Chang J-K, et al. (2016) Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries. ACS Applied Materials & Interfaces 8: 20993–21001. Available: http://dx.doi.org/10.1021/acsami.6b05827.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
27-Jul-2016
DOI:
10.1021/acsami.6b05827
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
This research was supported by Ministry of Science and Technology Taiwan (102-2221-E-008-113-MY3 and 105-2628-E-008-005-MY3).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHung, Yu-Hanen
dc.contributor.authorLu, Ang-Yuen
dc.contributor.authorChang, Yung-Huangen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorChang, Jeng-Kueien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorSu, Ching-Yuanen
dc.date.accessioned2016-11-03T08:32:30Z-
dc.date.available2016-11-03T08:32:30Z-
dc.date.issued2016-07-27en
dc.identifier.citationHung Y-H, Lu A-Y, Chang Y-H, Huang J-K, Chang J-K, et al. (2016) Scalable Patterning of MoS2Nanoribbons by Micromolding in Capillaries. ACS Applied Materials & Interfaces 8: 20993–21001. Available: http://dx.doi.org/10.1021/acsami.6b05827.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.6b05827en
dc.identifier.urihttp://hdl.handle.net/10754/621576-
dc.description.abstractIn this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)2MoS4) as the printing ink. The obtained MoS2 nanoribbons had a thickness reaching as low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (length/width) of ∼7.4 × 108 were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 °C) results in high-quality conductive samples, and field-effect transistors based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 °C) result in a unique nanocrystalline MoSx structure (x ≈ 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method. The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of ∼211 mV at 10 mA/cm2 and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx nanostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials. © 2016 American Chemical Society.en
dc.description.sponsorshipThis research was supported by Ministry of Science and Technology Taiwan (102-2221-E-008-113-MY3 and 105-2628-E-008-005-MY3).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectfield-effect transistors (FET)en
dc.subjecthydrogen evolution reaction (HER)en
dc.subjectMoS2en
dc.subjectnanoimprinten
dc.subjectpatterningen
dc.titleScalable Patterning of MoS2Nanoribbons by Micromolding in Capillariesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.contributor.institutionGraduate Institute of Energy Engineering, National Central University, Tao-Yuan, Taiwanen
dc.contributor.institutionDepartment of Mechanical Engineering, National Central University, Tao-Yuan, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionGraduate Institute of Material Science and Engineering, National Central University, Tao-Yuan, Taiwanen
kaust.authorLu, Ang-Yuen
kaust.authorHuang, Jing-Kaien
kaust.authorLi, Lain-Jongen
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