Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

Handle URI:
http://hdl.handle.net/10754/621571
Title:
Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure
Authors:
Zhang, Y.; Mi, W. B.; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhang Y, Mi WB, Zhang XX (2016) Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure. EPL (Europhysics Letters) 114: 67003. Available: http://dx.doi.org/10.1209/0295-5075/114/67003.
Publisher:
IOP Publishing
Journal:
EPL (Europhysics Letters)
Issue Date:
20-Jul-2016
DOI:
10.1209/0295-5075/114/67003
Type:
Article
ISSN:
0295-5075; 1286-4854
Sponsors:
51171126, NSFC
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Y.en
dc.contributor.authorMi, W. B.en
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2016-11-03T08:32:23Z-
dc.date.available2016-11-03T08:32:23Z-
dc.date.issued2016-07-20en
dc.identifier.citationZhang Y, Mi WB, Zhang XX (2016) Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure. EPL (Europhysics Letters) 114: 67003. Available: http://dx.doi.org/10.1209/0295-5075/114/67003.en
dc.identifier.issn0295-5075en
dc.identifier.issn1286-4854en
dc.identifier.doi10.1209/0295-5075/114/67003en
dc.identifier.urihttp://hdl.handle.net/10754/621571-
dc.description.abstractCurrent-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.en
dc.description.sponsorship51171126, NSFCen
dc.publisherIOP Publishingen
dc.titlePositive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructureen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalEPL (Europhysics Letters)en
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin, Chinaen
kaust.authorZhang, Xixiangen
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