Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides

Handle URI:
http://hdl.handle.net/10754/621551
Title:
Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides
Authors:
Zheng, Yu Jie; Huang, Yu Li; Chen, Yifeng; Zhao, Weijie; Eda, Goki; Spataru, Catalin D.; Zhang, Wenjing; Chang, Yung-Huang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chi, Dongzhi; Quek, Su Ying; Wee, Andrew Thye Shen
Abstract:
© 2016 American Chemical Society. The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zheng YJ, Huang YL, Chen Y, Zhao W, Eda G, et al. (2016) Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides. ACS Nano 10: 2476–2484. Available: http://dx.doi.org/10.1021/acsnano.5b07314.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
21-Jan-2016
DOI:
10.1021/acsnano.5b07314
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
The authors thank Zhuo Wang and Qixing Wang for helping us with transferring the CVD-WSe<INF>2</INF> samples and checking the sample quality, Prof. Satoshi Kera and Kyushu Synchrotron Light Research Center (Japan) for ARPES mapping of the clean Au(111) surface, as well as Xin Luo, Kapildeb Dolui, Suchun Li and Zijing Ding for discussions. A.T.S.W. acknowledges support from MOE Grant R-144-000-321-112. S.Y.Q, and Y.C. acknowledge support from Grant NRF-NRFF2013-07 from the National Research Foundation, Singapore. G.E. acknowledges support from Grant NRF-NRFF2011-02 from the National Research Foundation, Singapore. Computations were performed on the NUS Graphene Research Centre cluster. We acknowledge support from the Singapore National Research Foundation, Prime Minister's Office, under its medium-sized centre program. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the U.S. DOE under contract DE-AC04-94AL85000.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZheng, Yu Jieen
dc.contributor.authorHuang, Yu Lien
dc.contributor.authorChen, Yifengen
dc.contributor.authorZhao, Weijieen
dc.contributor.authorEda, Gokien
dc.contributor.authorSpataru, Catalin D.en
dc.contributor.authorZhang, Wenjingen
dc.contributor.authorChang, Yung-Huangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChi, Dongzhien
dc.contributor.authorQuek, Su Yingen
dc.contributor.authorWee, Andrew Thye Shenen
dc.date.accessioned2016-11-03T08:31:58Z-
dc.date.available2016-11-03T08:31:58Z-
dc.date.issued2016-01-21en
dc.identifier.citationZheng YJ, Huang YL, Chen Y, Zhao W, Eda G, et al. (2016) Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides. ACS Nano 10: 2476–2484. Available: http://dx.doi.org/10.1021/acsnano.5b07314.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.5b07314en
dc.identifier.urihttp://hdl.handle.net/10754/621551-
dc.description.abstract© 2016 American Chemical Society. The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.en
dc.description.sponsorshipThe authors thank Zhuo Wang and Qixing Wang for helping us with transferring the CVD-WSe<INF>2</INF> samples and checking the sample quality, Prof. Satoshi Kera and Kyushu Synchrotron Light Research Center (Japan) for ARPES mapping of the clean Au(111) surface, as well as Xin Luo, Kapildeb Dolui, Suchun Li and Zijing Ding for discussions. A.T.S.W. acknowledges support from MOE Grant R-144-000-321-112. S.Y.Q, and Y.C. acknowledge support from Grant NRF-NRFF2013-07 from the National Research Foundation, Singapore. G.E. acknowledges support from Grant NRF-NRFF2011-02 from the National Research Foundation, Singapore. Computations were performed on the NUS Graphene Research Centre cluster. We acknowledge support from the Singapore National Research Foundation, Prime Minister's Office, under its medium-sized centre program. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the U.S. DOE under contract DE-AC04-94AL85000.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectenergy level alignmenten
dc.subjectfirst principle calculationsen
dc.subjectorganic-inorganic interfaceen
dc.subjectscanning tunneling microscopy/spectroscopyen
dc.subjectscreening effectsen
dc.subjecttwo-dimensional transition metal dichalcogenidesen
dc.titleHeterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singaporeen
dc.contributor.institutionInstitute of Materials Research and Engineering (IMRE), A∗STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis Way, Singapore, Singaporeen
dc.contributor.institutionCentre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, Singaporeen
dc.contributor.institutionDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, Singaporeen
dc.contributor.institutionSandia National Laboratories, Livermore, CA, United Statesen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, Chinaen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionInstitute of High Performance Computing, Agency for Science Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore, Singaporeen
kaust.authorLi, Lain-Jongen
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