Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide

Handle URI:
http://hdl.handle.net/10754/621549
Title:
Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide
Authors:
Huang, Yu Li; Ding, Zijing; Zhang, Wenjing; Chang, Yung-Huang; Shi, Yumeng; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Song, Zhibo; Zheng, Yu Jie; Chi, Dongzhi; Quek, Su Ying; Wee, Andrew T. S.
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication. © 2016 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Huang YL, Ding Z, Zhang W, Chang Y-H, Shi Y, et al. (2016) Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide. Nano Lett 16: 3682–3688. Available: http://dx.doi.org/10.1021/acs.nanolett.6b00888.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
3-May-2016
DOI:
10.1021/acs.nanolett.6b00888
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
A.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant No. R-144-000-321-112, and S.Y.Q, acknowledges support from Grant No. NRF-NRFF2013-07 from the National Research Foundation, Singapore. Computations were performed on the NUS Graphene Research Centre cluster. S.Y.Q. and A.T.S.W. acknowledge support from the Singapore National Research Foundation, Prime Minister's Office, under its medium-sized centre program. Y.L.H and D.C. acknowledge financial support from IMRE Pharos Project No. IMRE/15-2C0115.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Yu Lien
dc.contributor.authorDing, Zijingen
dc.contributor.authorZhang, Wenjingen
dc.contributor.authorChang, Yung-Huangen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorSong, Zhiboen
dc.contributor.authorZheng, Yu Jieen
dc.contributor.authorChi, Dongzhien
dc.contributor.authorQuek, Su Yingen
dc.contributor.authorWee, Andrew T. S.en
dc.date.accessioned2016-11-03T08:31:54Z-
dc.date.available2016-11-03T08:31:54Z-
dc.date.issued2016-05-03en
dc.identifier.citationHuang YL, Ding Z, Zhang W, Chang Y-H, Shi Y, et al. (2016) Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide. Nano Lett 16: 3682–3688. Available: http://dx.doi.org/10.1021/acs.nanolett.6b00888.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.6b00888en
dc.identifier.urihttp://hdl.handle.net/10754/621549-
dc.description.abstractTwo-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication. © 2016 American Chemical Society.en
dc.description.sponsorshipA.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant No. R-144-000-321-112, and S.Y.Q, acknowledges support from Grant No. NRF-NRFF2013-07 from the National Research Foundation, Singapore. Computations were performed on the NUS Graphene Research Centre cluster. S.Y.Q. and A.T.S.W. acknowledge support from the Singapore National Research Foundation, Prime Minister's Office, under its medium-sized centre program. Y.L.H and D.C. acknowledge financial support from IMRE Pharos Project No. IMRE/15-2C0115.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectdislocation coreen
dc.titleGap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenideen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.contributor.institutionInstitute of Materials Research and Engineering (IMRE), ASTAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singaporeen
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singaporeen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, Chinaen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionCentre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, Singaporeen
kaust.authorShi, Yumengen
kaust.authorLi, Lain-Jongen
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