Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

Handle URI:
http://hdl.handle.net/10754/621525
Title:
Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes
Authors:
Wu, Di; Pak, Alexander J.; Liu, Yingnan; Zhou, Yu; Wu, Xiaoyu; Zhu, Yihan; Lin, Min; Han, Yu ( 0000-0003-1462-1118 ) ; Ren, Yuan; Peng, Hailin; Tsai, Yu-Hao; Hwang, Gyeong S.; Lai, Keji
Abstract:
© 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wu D, Pak AJ, Liu Y, Zhou Y, Wu X, et al. (2015) Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes . Nano Lett 15: 8136–8140. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03575.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
17-Nov-2015
DOI:
10.1021/acs.nanolett.5b03575
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The MIM work (D.W., Y.L., X.W., Y.R, K.L.) was supported by Welch Foundation Grant F-1814. Theoretical calculation (A.P., Y.T., G.H.) was supported in part by the Robert A. Welch Foundation (F-1535). We also thank the Texas Advanced Computing Center for use of their computing resources.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, Dien
dc.contributor.authorPak, Alexander J.en
dc.contributor.authorLiu, Yingnanen
dc.contributor.authorZhou, Yuen
dc.contributor.authorWu, Xiaoyuen
dc.contributor.authorZhu, Yihanen
dc.contributor.authorLin, Minen
dc.contributor.authorHan, Yuen
dc.contributor.authorRen, Yuanen
dc.contributor.authorPeng, Hailinen
dc.contributor.authorTsai, Yu-Haoen
dc.contributor.authorHwang, Gyeong S.en
dc.contributor.authorLai, Kejien
dc.date.accessioned2016-11-03T08:31:24Z-
dc.date.available2016-11-03T08:31:24Z-
dc.date.issued2015-11-17en
dc.identifier.citationWu D, Pak AJ, Liu Y, Zhou Y, Wu X, et al. (2015) Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes . Nano Lett 15: 8136–8140. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03575.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.5b03575en
dc.identifier.urihttp://hdl.handle.net/10754/621525-
dc.description.abstract© 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.en
dc.description.sponsorshipThe MIM work (D.W., Y.L., X.W., Y.R, K.L.) was supported by Welch Foundation Grant F-1814. Theoretical calculation (A.P., Y.T., G.H.) was supported in part by the Robert A. Welch Foundation (F-1535). We also thank the Texas Advanced Computing Center for use of their computing resources.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectfirst-principles calculationsen
dc.subjectIn2Se3 nanoflakesen
dc.subjectlayer-dependent dielectric constanten
dc.subjectlayered materialsen
dc.subjectMicrowave impedance microscopyen
dc.subjectpolarizationen
dc.titleThickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, TX, United Statesen
dc.contributor.institutionDepartment of Chemical Engineering, University of Texas at Austin, Austin, TX, United Statesen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, Chinaen
kaust.authorZhu, Yihanen
kaust.authorHan, Yuen
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