On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

Handle URI:
http://hdl.handle.net/10754/621519
Title:
On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy
Authors:
Mishra, Pawan ( 0000-0001-9764-6016 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Anjum, Dalaver H.; Elafandy, Rami T. ( 0000-0002-8529-2967 ) ; Prabaswara, Aditya; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory; Advanced Nanofabrication and Thin Film Core Lab; Imaging and Characterization Core Lab
Citation:
Mishra P, Janjua B, Ng TK, Anjum DH, Elafandy RT, et al. (2016) On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy. Optical Materials Express 6: 2052. Available: http://dx.doi.org/10.1364/OME.6.002052.
Publisher:
The Optical Society
Journal:
Optical Materials Express
Issue Date:
23-May-2016
DOI:
10.1364/OME.6.002052
Type:
Article
ISSN:
2159-3930
Sponsors:
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting, grant no. KACST TIC R2-FP-008, and King Abdullah University of Science and Technology (KAUST) baseline funding, grant no. BAS/1/1614-01-01.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMishra, Pawanen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorShen, Chaoen
dc.contributor.authorSalhi, Abdelmajiden
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-11-03T08:31:16Z-
dc.date.available2016-11-03T08:31:16Z-
dc.date.issued2016-05-23en
dc.identifier.citationMishra P, Janjua B, Ng TK, Anjum DH, Elafandy RT, et al. (2016) On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy. Optical Materials Express 6: 2052. Available: http://dx.doi.org/10.1364/OME.6.002052.en
dc.identifier.issn2159-3930en
dc.identifier.doi10.1364/OME.6.002052en
dc.identifier.urihttp://hdl.handle.net/10754/621519-
dc.description.abstractIn this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.en
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting, grant no. KACST TIC R2-FP-008, and King Abdullah University of Science and Technology (KAUST) baseline funding, grant no. BAS/1/1614-01-01.en
dc.publisherThe Optical Societyen
dc.titleOn the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxyen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalOptical Materials Expressen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabiaen
kaust.authorMishra, Pawanen
kaust.authorJanjua, Bilalen
kaust.authorNg, Tien Kheeen
kaust.authorAnjum, Dalaver H.en
kaust.authorElafandy, Rami T.en
kaust.authorPrabaswara, Adityaen
kaust.authorShen, Chaoen
kaust.authorOoi, Boon S.en
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