Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

Handle URI:
http://hdl.handle.net/10754/621518
Title:
Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material
Authors:
Mayet, Abdulilah M. ( 0000-0001-7739-0105 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Citation:
Mayet AM, Hussain AM, Hussain MM (2015) Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material. Nanotechnology 27: 035202. Available: http://dx.doi.org/10.1088/0957-4484/27/3/035202.
Publisher:
IOP Publishing
Journal:
Nanotechnology
Issue Date:
4-Dec-2015
DOI:
10.1088/0957-4484/27/3/035202
Type:
Article
ISSN:
0957-4484; 1361-6528
Sponsors:
We are very grateful to Professor Tsu-Jae King Liu of the University of California at Berkeley for the valuable feedbacks regarding this manuscript. AM was partially supported by KAUST OCRF Award No. GRP-CF-2011-08-S and AMH is supported under KAUST OCRF CRG-1-2012-HUS-008. MMH directed the work. AM worked on fabrication and measured data. AMH worked on the analysis. All authors have given approval to the final version of the manuscript.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMayet, Abdulilah M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-11-03T08:31:14Z-
dc.date.available2016-11-03T08:31:14Z-
dc.date.issued2015-12-04en
dc.identifier.citationMayet AM, Hussain AM, Hussain MM (2015) Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material. Nanotechnology 27: 035202. Available: http://dx.doi.org/10.1088/0957-4484/27/3/035202.en
dc.identifier.issn0957-4484en
dc.identifier.issn1361-6528en
dc.identifier.doi10.1088/0957-4484/27/3/035202en
dc.identifier.urihttp://hdl.handle.net/10754/621518-
dc.description.abstract© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.en
dc.description.sponsorshipWe are very grateful to Professor Tsu-Jae King Liu of the University of California at Berkeley for the valuable feedbacks regarding this manuscript. AM was partially supported by KAUST OCRF Award No. GRP-CF-2011-08-S and AMH is supported under KAUST OCRF CRG-1-2012-HUS-008. MMH directed the work. AM worked on fabrication and measured data. AMH worked on the analysis. All authors have given approval to the final version of the manuscript.en
dc.publisherIOP Publishingen
dc.subjectamorphous metalen
dc.subjectnanoelectromechanical switchen
dc.subjecttungsten nitrideen
dc.titleThree-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic materialen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalNanotechnologyen
kaust.authorMayet, Abdulilah M.en
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
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