Monolithic 3D CMOS Using Layered Semiconductors

Handle URI:
http://hdl.handle.net/10754/621498
Title:
Monolithic 3D CMOS Using Layered Semiconductors
Authors:
Sachid, Angada B.; Tosun, Mahmut; Desai, Sujay B.; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R.; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Sachid AB, Tosun M, Desai SB, Hsu C-Y, Lien D-H, et al. (2016) Monolithic 3D CMOS Using Layered Semiconductors. Advanced Materials 28: 2547–2554. Available: http://dx.doi.org/10.1002/adma.201505113.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
2-Feb-2016
DOI:
10.1002/adma.201505113
Type:
Article
ISSN:
0935-9648
Sponsors:
A.B.S. and M.T. contributed equally to this work. A.B.S. and C.H. conceived the idea. A.B.S., M.T., and A.J. formulated the fabrication flow. A.B.S., M.T., S.B.D., C.-Y.H., D.-H.L., S.R.M., M.H., J.S.K., and Y.Z. fabricated the devices. A.B.S. and M.T. performed electrical measurements. A.B.S. analyzed the data. Y.-Z.C. and Y.-L.C. did transmission electron microscopy. All the authors were involved in preparing the manuscript. A.B.S. was funded by Applied Materials, Inc. and Entegris, Inc. under the I-RiCE Program. M.T. was funded by the Director, Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05Ch11231.
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSachid, Angada B.en
dc.contributor.authorTosun, Mahmuten
dc.contributor.authorDesai, Sujay B.en
dc.contributor.authorHsu, Ching-Yien
dc.contributor.authorLien, Der-Hsienen
dc.contributor.authorMadhvapathy, Surabhi R.en
dc.contributor.authorChen, Yu-Zeen
dc.contributor.authorHettick, Marken
dc.contributor.authorKang, Jeong Seuken
dc.contributor.authorZeng, Yupingen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorChang, Edward Yien
dc.contributor.authorChueh, Yu-Lunen
dc.contributor.authorJavey, Alien
dc.contributor.authorHu, Chenmingen
dc.date.accessioned2016-11-03T08:30:49Z-
dc.date.available2016-11-03T08:30:49Z-
dc.date.issued2016-02-02en
dc.identifier.citationSachid AB, Tosun M, Desai SB, Hsu C-Y, Lien D-H, et al. (2016) Monolithic 3D CMOS Using Layered Semiconductors. Advanced Materials 28: 2547–2554. Available: http://dx.doi.org/10.1002/adma.201505113.en
dc.identifier.issn0935-9648en
dc.identifier.doi10.1002/adma.201505113en
dc.identifier.urihttp://hdl.handle.net/10754/621498-
dc.description.sponsorshipA.B.S. and M.T. contributed equally to this work. A.B.S. and C.H. conceived the idea. A.B.S., M.T., and A.J. formulated the fabrication flow. A.B.S., M.T., S.B.D., C.-Y.H., D.-H.L., S.R.M., M.H., J.S.K., and Y.Z. fabricated the devices. A.B.S. and M.T. performed electrical measurements. A.B.S. analyzed the data. Y.-Z.C. and Y.-L.C. did transmission electron microscopy. All the authors were involved in preparing the manuscript. A.B.S. was funded by Applied Materials, Inc. and Entegris, Inc. under the I-RiCE Program. M.T. was funded by the Director, Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05Ch11231.en
dc.publisherWiley-Blackwellen
dc.subjectMetal oxide semiconductorsen
dc.subjectMonolithic 3D integrationen
dc.subjectTransition metal dichalcogenidesen
dc.subjectUltra-low voltage operationen
dc.titleMonolithic 3D CMOS Using Layered Semiconductorsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionElectrical Engineering and Computer Sciences; University of California; Berkeley CA 94720 USAen
dc.contributor.institutionMaterial Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USAen
dc.contributor.institutionBerkeley Sensor and Actuator Center; University of California; Berkeley CA 94720 USAen
dc.contributor.institutionDepartment of Material Sciences and Engineering; National Chao-Tung University; Hsinchu 300 Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering; National Tsing Hua University; Hsinchu 30013 Taiwanen
dc.contributor.institutionJoint Center for Artificial Photosynthesis; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USAen
kaust.authorLien, Der-Hsienen
kaust.authorHe, Jr-Hauen
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