InN-based heterojunction photodetector with extended infrared response

Handle URI:
http://hdl.handle.net/10754/621496
Title:
InN-based heterojunction photodetector with extended infrared response
Authors:
Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung
Abstract:
© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Hsu L-H, Kuo C-T, Huang J-K, Hsu S-C, Lee H-Y, et al. (2015) InN-based heterojunction photodetector with extended infrared response. Optics Express 23: 31150. Available: http://dx.doi.org/10.1364/OE.23.031150.
Publisher:
The Optical Society
Journal:
Optics Express
Issue Date:
21-Nov-2015
DOI:
10.1364/OE.23.031150
Type:
Article
ISSN:
1094-4087
Sponsors:
The work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHsu, Lung-Hsingen
dc.contributor.authorKuo, Chien-Tingen
dc.contributor.authorHuang, Jhih-Kaien
dc.contributor.authorHsu, Shun-Chiehen
dc.contributor.authorLee, Hsin-Yingen
dc.contributor.authorKuo, Hao-Chungen
dc.contributor.authorLee, Po-Tsungen
dc.contributor.authorTsai, Yu-Linen
dc.contributor.authorHwang, Yi-Chiaen
dc.contributor.authorSu, Chen-Fengen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorLin, Shih-Yenen
dc.contributor.authorCheng, Yuh-Jenen
dc.contributor.authorLin, Chien-Chungen
dc.date.accessioned2016-11-03T08:30:46Z-
dc.date.available2016-11-03T08:30:46Z-
dc.date.issued2015-11-21en
dc.identifier.citationHsu L-H, Kuo C-T, Huang J-K, Hsu S-C, Lee H-Y, et al. (2015) InN-based heterojunction photodetector with extended infrared response. Optics Express 23: 31150. Available: http://dx.doi.org/10.1364/OE.23.031150.en
dc.identifier.issn1094-4087en
dc.identifier.doi10.1364/OE.23.031150en
dc.identifier.urihttp://hdl.handle.net/10754/621496-
dc.description.abstract© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.en
dc.description.sponsorshipThe work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.en
dc.publisherThe Optical Societyen
dc.titleInN-based heterojunction photodetector with extended infrared responseen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalOptics Expressen
dc.contributor.institutionInstitute of Lighting and Energy Photonics, National Chiao Tung University, Tainan, Taiwanen
dc.contributor.institutionInstitute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionInstitute of Photonic System, National Chiao Tung University, Tainan, Taiwanen
dc.contributor.institutionDepartment of Photonics, National Cheng Kung University, Tainan, Taiwanen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taiwanen
kaust.authorHe, Jr-Hauen
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