Applications of STEM-EELS to complex oxides

Handle URI:
http://hdl.handle.net/10754/621378
Title:
Applications of STEM-EELS to complex oxides
Authors:
Gázquez, Jaume; Sánchez-Santolino, Gabriel; Biškup, Neven; Roldán, Manuel A.; Cabero, M.; Pennycook, Stephen J.; Varela, María
Abstract:
In this chapter we will review a few examples of applications of atomic resolution aberration corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) to complex oxide materials. These are most challenging systems where subtle changes in structure or chemistry may result in colossal responses in macroscopic physical behavior. Here, we will review how atomic resolution compositional mapping can be achieved in manganite thin films and single crystals, highlighting the importance of considering artifacts during quantification. Besides, minor changes in near edge fine structure may take place when the crystalline environment, and hence nearest neighbor configuration, is modified. These can also be tracked by atomic resolution EELS, as will be shown through the study of binary Fe oxides. Also, examples regarding the study of distributions of point defects such as O vacancies in cobaltite thin films will be discussed. In these materials, a combination of epitaxial strain and defects may promote physical behaviors not present in bulk, such as the stabilization of unexpected spin state superlattices. Last, a study of extended defects such as dislocation lines will be reviewed. In particular, we will show how chemical segregation at dislocation cores in yttria-stabilized zirconia grain boundaries results in the generation of static O vacancies that affect the local electrostatic potential and hence, the macroscopic ionic conduction properties. © 2016.
KAUST Department:
King Abdullah University of Science and Technology (KAUST), 23955, Saudi Arabia
Citation:
Gázquez J, Sánchez-Santolino G, Biškup N, Roldán MA, Cabero M, et al. (2016) Applications of STEM-EELS to complex oxides. Materials Science in Semiconductor Processing. Available: http://dx.doi.org/10.1016/j.mssp.2016.06.005.
Publisher:
Elsevier BV
Journal:
Materials Science in Semiconductor Processing
Issue Date:
26-Jun-2016
DOI:
10.1016/j.mssp.2016.06.005
Type:
Article
ISSN:
1369-8001
Sponsors:
Ministerio de Economía y Competitividad[MAT2015-66888-C3-3-R]; European Research Council Starting Investigator Award[STEMOX # 239739]; Fundación BBVA; Ramon Y Cajal Program[RYC-2012-11709]
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorGázquez, Jaumeen
dc.contributor.authorSánchez-Santolino, Gabrielen
dc.contributor.authorBiškup, Nevenen
dc.contributor.authorRoldán, Manuel A.en
dc.contributor.authorCabero, M.en
dc.contributor.authorPennycook, Stephen J.en
dc.contributor.authorVarela, Maríaen
dc.date.accessioned2016-11-03T08:27:54Z-
dc.date.available2016-11-03T08:27:54Z-
dc.date.issued2016-06-26en
dc.identifier.citationGázquez J, Sánchez-Santolino G, Biškup N, Roldán MA, Cabero M, et al. (2016) Applications of STEM-EELS to complex oxides. Materials Science in Semiconductor Processing. Available: http://dx.doi.org/10.1016/j.mssp.2016.06.005.en
dc.identifier.issn1369-8001en
dc.identifier.doi10.1016/j.mssp.2016.06.005en
dc.identifier.urihttp://hdl.handle.net/10754/621378-
dc.description.abstractIn this chapter we will review a few examples of applications of atomic resolution aberration corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) to complex oxide materials. These are most challenging systems where subtle changes in structure or chemistry may result in colossal responses in macroscopic physical behavior. Here, we will review how atomic resolution compositional mapping can be achieved in manganite thin films and single crystals, highlighting the importance of considering artifacts during quantification. Besides, minor changes in near edge fine structure may take place when the crystalline environment, and hence nearest neighbor configuration, is modified. These can also be tracked by atomic resolution EELS, as will be shown through the study of binary Fe oxides. Also, examples regarding the study of distributions of point defects such as O vacancies in cobaltite thin films will be discussed. In these materials, a combination of epitaxial strain and defects may promote physical behaviors not present in bulk, such as the stabilization of unexpected spin state superlattices. Last, a study of extended defects such as dislocation lines will be reviewed. In particular, we will show how chemical segregation at dislocation cores in yttria-stabilized zirconia grain boundaries results in the generation of static O vacancies that affect the local electrostatic potential and hence, the macroscopic ionic conduction properties. © 2016.en
dc.description.sponsorshipMinisterio de Economía y Competitividad[MAT2015-66888-C3-3-R]en
dc.description.sponsorshipEuropean Research Council Starting Investigator Award[STEMOX # 239739]en
dc.description.sponsorshipFundación BBVAen
dc.description.sponsorshipRamon Y Cajal Program[RYC-2012-11709]en
dc.publisherElsevier BVen
dc.subjectComplex oxidesen
dc.titleApplications of STEM-EELS to complex oxidesen
dc.typeArticleen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), 23955, Saudi Arabiaen
dc.identifier.journalMaterials Science in Semiconductor Processingen
dc.contributor.institutionInstitute of Materials Science of Barcelona ICMAB-CSIC, Bellaterra, 08193 Barcelona, Spainen
dc.contributor.institutionFacultad de CC. Físicas and Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spainen
dc.contributor.institutionInstitute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japanen
dc.contributor.institutionCentro Nacional de Microscopía Electrónica, Universidad Complutense de Madrid, 28040 Madrid, Spainen
dc.contributor.institutionNational University of Singapore, Department of Materials Science and Engineering, 9 Engineering Drive 1, Block EA, 07-14, 117575 Singaporeen
kaust.authorRoldán, Manuel A.en
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