Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Handle URI:
http://hdl.handle.net/10754/621357
Title:
Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.
KAUST Department:
Integrated Nanotechnology Lab
Citation:
Ghoneim MT, Alfaraj N, Sevilla GAT, Hussain MM (2015) Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET. 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2015.7388905.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)
Conference/Event name:
15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Issue Date:
3-Feb-2016
DOI:
10.1109/NANO.2015.7388905
Type:
Conference Paper
Appears in Collections:
Conference Papers; Integrated Nanotechnology Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-11-03T06:58:25Z-
dc.date.available2016-11-03T06:58:25Z-
dc.date.issued2016-02-03en
dc.identifier.citationGhoneim MT, Alfaraj N, Sevilla GAT, Hussain MM (2015) Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET. 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2015.7388905.en
dc.identifier.doi10.1109/NANO.2015.7388905en
dc.identifier.urihttp://hdl.handle.net/10754/621357-
dc.description.abstractFuture wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectelectronicsen
dc.subjectFinFETen
dc.subjectflexibleen
dc.subjectsensoren
dc.subjectsiliconen
dc.titleUltra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFETen
dc.typeConference Paperen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journal2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)en
dc.conference.date27 July 2015 through 30 July 2015en
dc.conference.name15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015en
kaust.authorGhoneim, Mohamed T.en
kaust.authorAlfaraj, Nasiren
kaust.authorSevilla, Galo T.en
kaust.authorHussain, Muhammad Mustafaen
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