Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

Handle URI:
http://hdl.handle.net/10754/621344
Title:
Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Nanotechnology Lab
Citation:
Hanna AN, Hussain AM, Hussain MM (2015) Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits. 2015 73rd Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2015.7175633.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 73rd Annual Device Research Conference (DRC)
Conference/Event name:
73rd Annual Device Research Conference, DRC 2015
Issue Date:
12-Aug-2015
DOI:
10.1109/DRC.2015.7175633
Type:
Conference Paper
Appears in Collections:
Conference Papers; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-11-03T06:58:09Z-
dc.date.available2016-11-03T06:58:09Z-
dc.date.issued2015-08-12en
dc.identifier.citationHanna AN, Hussain AM, Hussain MM (2015) Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits. 2015 73rd Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2015.7175633.en
dc.identifier.doi10.1109/DRC.2015.7175633en
dc.identifier.urihttp://hdl.handle.net/10754/621344-
dc.description.abstractWe report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectDielectricsen
dc.titleWavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuitsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journal2015 73rd Annual Device Research Conference (DRC)en
dc.conference.date21 June 2015 through 24 June 2015en
dc.conference.name73rd Annual Device Research Conference, DRC 2015en
kaust.authorHanna, Amiren
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
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