Surface effects of electrode-dependent switching behavior of resistive random-access memory

Handle URI:
http://hdl.handle.net/10754/621163
Title:
Surface effects of electrode-dependent switching behavior of resistive random-access memory
Authors:
Ke, Jr Jian; Wei, Tzu Chiao; Tsai, Dung Sheng; Lin, Chun-Ho; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Ke J-J, Wei T-C, Tsai D-S, Lin C-H, He J-H (2016) Surface effects of electrode-dependent switching behavior of resistive random-access memory. Applied Physics Letters 109: 131603. Available: http://dx.doi.org/10.1063/1.4963671.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
26-Sep-2016
DOI:
10.1063/1.4963671
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/109/13/10.1063/1.4963671
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKe, Jr Jianen
dc.contributor.authorWei, Tzu Chiaoen
dc.contributor.authorTsai, Dung Shengen
dc.contributor.authorLin, Chun-Hoen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2016-10-24T13:47:27Z-
dc.date.available2016-10-24T13:47:27Z-
dc.date.issued2016-09-26en
dc.identifier.citationKe J-J, Wei T-C, Tsai D-S, Lin C-H, He J-H (2016) Surface effects of electrode-dependent switching behavior of resistive random-access memory. Applied Physics Letters 109: 131603. Available: http://dx.doi.org/10.1063/1.4963671.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4963671en
dc.identifier.urihttp://hdl.handle.net/10754/621163-
dc.description.abstractThe surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/13/10.1063/1.4963671en
dc.rightsArchived with thanks to Applied Physics Letters. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.en
dc.titleSurface effects of electrode-dependent switching behavior of resistive random-access memoryen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwanen
kaust.authorKe, Jr Jianen
kaust.authorLin, Chun-Hoen
kaust.authorHe, Jr-Hauen
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