A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

Handle URI:
http://hdl.handle.net/10754/621060
Title:
A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Authors:
Kiefer, David; Yu, Liyang; Fransson, Erik; Gómez, Andrés; Primetzhofer, Daniel; Amassian, Aram ( 0000-0002-5734-1194 ) ; Campoy-Quiles, Mariano; Müller, Christian
Abstract:
Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Kiefer D, Yu L, Fransson E, Gómez A, Primetzhofer D, et al. (2016) A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics. Advanced Science: 1600203. Available: http://dx.doi.org/10.1002/advs.201600203.
Publisher:
Wiley-Blackwell
Journal:
Advanced Science
Issue Date:
Sep-2016
DOI:
10.1002/advs.201600203
Type:
Article
ISSN:
2198-3844
Sponsors:
Financial support from the Swedish Research Council Formas, the Knut and Alice Wallenberg Foundation through a Wallenberg Academy Fellowship, the Foundation of Strategic Research (SSF) through a research infrastructure fellowship and the European Research Council (ERC) under grant agreements no. 637624 and 648901 is gratefully acknowledged. The authors thank Jason Ryan and Anders Mårtensson (Chalmers) for help with thermal conductivity and SEC measurements, Dr. Duc T. Duong (Stanford University) for advice on doping efficiency calculations and CHESS (supported by the NSF & NIH/NIGMS via NSF award DMR-1332208) for providing experimental time for GIWAXS measurements. M.C.Q. and A.G. acknowledge financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496) and project CSD2010–00044 (Consolider NANOTHERM).
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/advs.201600203/abstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKiefer, Daviden
dc.contributor.authorYu, Liyangen
dc.contributor.authorFransson, Eriken
dc.contributor.authorGómez, Andrésen
dc.contributor.authorPrimetzhofer, Danielen
dc.contributor.authorAmassian, Aramen
dc.contributor.authorCampoy-Quiles, Marianoen
dc.contributor.authorMüller, Christianen
dc.date.accessioned2016-10-19T08:05:07Z-
dc.date.available2016-10-19T08:05:07Z-
dc.date.issued2016-09en
dc.identifier.citationKiefer D, Yu L, Fransson E, Gómez A, Primetzhofer D, et al. (2016) A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics. Advanced Science: 1600203. Available: http://dx.doi.org/10.1002/advs.201600203.en
dc.identifier.issn2198-3844en
dc.identifier.doi10.1002/advs.201600203en
dc.identifier.urihttp://hdl.handle.net/10754/621060-
dc.description.abstractPoly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.en
dc.description.sponsorshipFinancial support from the Swedish Research Council Formas, the Knut and Alice Wallenberg Foundation through a Wallenberg Academy Fellowship, the Foundation of Strategic Research (SSF) through a research infrastructure fellowship and the European Research Council (ERC) under grant agreements no. 637624 and 648901 is gratefully acknowledged. The authors thank Jason Ryan and Anders Mårtensson (Chalmers) for help with thermal conductivity and SEC measurements, Dr. Duc T. Duong (Stanford University) for advice on doping efficiency calculations and CHESS (supported by the NSF & NIH/NIGMS via NSF award DMR-1332208) for providing experimental time for GIWAXS measurements. M.C.Q. and A.G. acknowledge financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496) and project CSD2010–00044 (Consolider NANOTHERM).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/advs.201600203/abstracten
dc.rights© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectconjugated polymersen
dc.subjectinsulatorsen
dc.subjectmolecular dopantsen
dc.subjectorganic thermoelectricsen
dc.subjectsemiconductorsen
dc.subjectternary blenden
dc.titleA Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectricsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Scienceen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Swedenen
dc.contributor.institutionInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC) Esfera de la UAB, 08193 Bellaterra, Spainen
dc.contributor.institutionDepartment of Physics and Astronomy, Uppsala University, 5120 Uppsala, Swedenen
kaust.authorYu, Liyangen
kaust.authorAmassian, Aramen
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