Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

Handle URI:
http://hdl.handle.net/10754/620934
Title:
Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer
Authors:
Flemban, Tahani H. ( 0000-0002-2661-5092 ) ; Singaravelu, Venkatesh; Devi, Assa Aravindh Sasikala ( 0000-0001-9360-3457 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study shows that an in situ transparent and conductive Gd nanolayer (with a uniform thickness of ∼1 nm) at the interface between a lattice-matched (11-20) a-sapphire substrate and ZnO is formed during the deposition. This nanolayer significantly induces a relaxation mechanism that controls the dislocation distribution along the growth direction; which consequently improves the formation of homogeneous vertically aligned ZnO NRs. We demonstrate that both the lattice orientation of the substrate and the Gd characteristics are important in enhancing the NR synthesis, and we report precise control of the NR density by changing the oxygen partial pressure. We show that these NRs possess high optical and electrical quality, with a mobility of 177 cm2 (V s)-1, which is comparable to the best-reported mobility of ZnO NRs. Therefore, this new and simple method has significant potential for improving the performance of materials used in a wide range of electronic and optoelectronic applications.
KAUST Department:
Physical Sciences and Engineering Division
Citation:
Flemban TH, Singaravelu V, Sasikala Devi AA, Roqan IS (2015) Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer. RSC Adv 5: 94670–94678. Available: http://dx.doi.org/10.1039/c5ra19798h.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
RSC Adv.
Issue Date:
30-Oct-2015
DOI:
10.1039/c5ra19798h
Type:
Article
ISSN:
2046-2069
Sponsors:
The authors thank P. Edwards and R. W. Martin for providing access to the CL measurement facility at the University of Strathclyde. We wish to thank Ms Ecaterina Ware from Imperial College London, UK for TEM sample preparation. We acknowledge the financial support from General Directorate of Research Grants, from King Abdul-Aziz City of Science and Technology.
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2015/RA/C5RA19798H
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorFlemban, Tahani H.en
dc.contributor.authorSingaravelu, Venkateshen
dc.contributor.authorDevi, Assa Aravindh Sasikalaen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2016-10-12T07:39:42Z-
dc.date.available2016-10-12T07:39:42Z-
dc.date.issued2015-10-30en
dc.identifier.citationFlemban TH, Singaravelu V, Sasikala Devi AA, Roqan IS (2015) Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer. RSC Adv 5: 94670–94678. Available: http://dx.doi.org/10.1039/c5ra19798h.en
dc.identifier.issn2046-2069en
dc.identifier.doi10.1039/c5ra19798hen
dc.identifier.urihttp://hdl.handle.net/10754/620934-
dc.description.abstractWe demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study shows that an in situ transparent and conductive Gd nanolayer (with a uniform thickness of ∼1 nm) at the interface between a lattice-matched (11-20) a-sapphire substrate and ZnO is formed during the deposition. This nanolayer significantly induces a relaxation mechanism that controls the dislocation distribution along the growth direction; which consequently improves the formation of homogeneous vertically aligned ZnO NRs. We demonstrate that both the lattice orientation of the substrate and the Gd characteristics are important in enhancing the NR synthesis, and we report precise control of the NR density by changing the oxygen partial pressure. We show that these NRs possess high optical and electrical quality, with a mobility of 177 cm2 (V s)-1, which is comparable to the best-reported mobility of ZnO NRs. Therefore, this new and simple method has significant potential for improving the performance of materials used in a wide range of electronic and optoelectronic applications.en
dc.description.sponsorshipThe authors thank P. Edwards and R. W. Martin for providing access to the CL measurement facility at the University of Strathclyde. We wish to thank Ms Ecaterina Ware from Imperial College London, UK for TEM sample preparation. We acknowledge the financial support from General Directorate of Research Grants, from King Abdul-Aziz City of Science and Technology.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/RA/C5RA19798Hen
dc.titleHomogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayeren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering Divisionen
dc.identifier.journalRSC Adv.en
dc.eprint.versionPost-printen
kaust.authorFlemban, Tahani H.en
kaust.authorSingaravelu, Venkateshen
kaust.authorDevi, Assa Aravindh Sasikalaen
kaust.authorRoqan, Iman S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.