First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Handle URI:
http://hdl.handle.net/10754/619774
Title:
First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique
Authors:
Majid, Mohammed A. ( 0000-0003-2224-8982 ) ; Al-Jabr, Ahmad ( 0000-0002-3836-2184 ) ; Elafandy, Rami T.; Oubei, Hassan M. ( 0000-0001-6440-2488 ) ; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Alnahhas, Bayan A.; Anjum, Dalaver H.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Shehata, Mohamed; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Mohammed A. Majid ; Ahmad A. Al-Jabr ; Rami T. Elafandy ; Hassan M. Oubei ; Mohd S. Alias ; Bayan A. Alnahhas ; Dalaver H. Anjum ; Tien Khee Ng ; Mohamed Shehata and Boon S. Ooi " First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique ", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670A (March 7, 2016); doi:10.1117/12.2202768; http://dx.doi.org/10.1117/12.2202768
Journal:
Novel In-Plane Semiconductor Lasers XV
Conference/Event name:
Novel In-Plane Semiconductor Lasers XV
Issue Date:
7-Mar-2016
DOI:
10.1117/12.2202768
Type:
Conference Paper
Sponsors:
The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST.
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2202768
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorMajid, Mohammed A.en
dc.contributor.authorAl-Jabr, Ahmaden
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorOubei, Hassan M.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorAlnahhas, Bayan A.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorShehata, Mohameden
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-09-04T08:35:17Z-
dc.date.available2016-09-04T08:35:17Z-
dc.date.issued2016-03-07-
dc.identifier.citationMohammed A. Majid ; Ahmad A. Al-Jabr ; Rami T. Elafandy ; Hassan M. Oubei ; Mohd S. Alias ; Bayan A. Alnahhas ; Dalaver H. Anjum ; Tien Khee Ng ; Mohamed Shehata and Boon S. Ooi " First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique ", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670A (March 7, 2016); doi:10.1117/12.2202768; http://dx.doi.org/10.1117/12.2202768en
dc.identifier.doi10.1117/12.2202768-
dc.identifier.urihttp://hdl.handle.net/10754/619774-
dc.description.abstractIn this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en
dc.description.sponsorshipThe authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST.en
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2202768en
dc.rightsCopyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.titleFirst demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing techniqueen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalNovel In-Plane Semiconductor Lasers XVen
dc.conference.dateFebruary 13, 2016en
dc.conference.nameNovel In-Plane Semiconductor Lasers XVen
dc.conference.locationSan Francisco, California, United Statesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionElectrical and Computer Engineering department, Effat University, Jeddah 21478, (KSA)en
kaust.authorMajid, Mohammed A.en
kaust.authorAl-Jabr, Ahmad A.en
kaust.authorElafandy, Rami T.en
kaust.authorOubei, Hassan M.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorAnjum, Dalaver H.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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