Optical study of the band structure of wurtzite GaP nanowires

Handle URI:
http://hdl.handle.net/10754/618376
Title:
Optical study of the band structure of wurtzite GaP nanowires
Authors:
Assali, S. ( 0000-0002-3919-9112 ) ; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M. ( 0000-0002-3813-1474 ) ; Bechstedt, F. ( 0000-0002-3294-6082 ) ; Bakkers, E. P. A. M.; Haverkort, J. E. M.
Abstract:
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Optical study of the band structure of wurtzite GaP nanowires 2016, 120 (4):044304 Journal of Applied Physics
Journal:
Journal of Applied Physics
Issue Date:
25-Jul-2016
DOI:
10.1063/1.4959147
Type:
Article
ISSN:
0021-8979; 1089-7550
Sponsors:
The authors thank P. J. van Veldhoven for the technical support with the MOVPE reactor, M. A. Verheijen for the TEM investigation, and A. Silov, T. T. T. Vu, D. van Dam, and L. Gagliano for the fruitful discussion. We thank the Dutch Organization for Scientific Research (NWO-VICI 700.10.441). NWO is also acknowledged for funding the Atom Probe facility. J. Greil acknowledges funding by the Austrian Science Fund (FWF): J3540-N30.
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/120/4/10.1063/1.4959147
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorAssali, S.en
dc.contributor.authorGreil, J.en
dc.contributor.authorZardo, I.en
dc.contributor.authorBelabbes, Abderrezaken
dc.contributor.authorde Moor, M. W. A.en
dc.contributor.authorKoelling, S.en
dc.contributor.authorKoenraad, P. M.en
dc.contributor.authorBechstedt, F.en
dc.contributor.authorBakkers, E. P. A. M.en
dc.contributor.authorHaverkort, J. E. M.en
dc.date.accessioned2016-08-14T07:27:21Z-
dc.date.available2016-08-14T07:27:21Z-
dc.date.issued2016-07-25-
dc.identifier.citationOptical study of the band structure of wurtzite GaP nanowires 2016, 120 (4):044304 Journal of Applied Physicsen
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.doi10.1063/1.4959147-
dc.identifier.urihttp://hdl.handle.net/10754/618376-
dc.description.abstractWe investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.en
dc.description.sponsorshipThe authors thank P. J. van Veldhoven for the technical support with the MOVPE reactor, M. A. Verheijen for the TEM investigation, and A. Silov, T. T. T. Vu, D. van Dam, and L. Gagliano for the fruitful discussion. We thank the Dutch Organization for Scientific Research (NWO-VICI 700.10.441). NWO is also acknowledged for funding the Atom Probe facility. J. Greil acknowledges funding by the Austrian Science Fund (FWF): J3540-N30.en
dc.language.isoenen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/120/4/10.1063/1.4959147en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleOptical study of the band structure of wurtzite GaP nanowiresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlandsen
dc.contributor.institutionInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universitat, Max-Wien-Platz 1, D-07743 Jena, Germanyen
dc.contributor.institutionKavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlandsen
dc.contributor.institutionDepartment of Engineering Physics, Polytechnique Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada.en
dc.contributor.institutionInstitute of solid state electronics, Vienna university of technology, Floragasse 7, 1040 Vienna, Austria.en
dc.contributor.institutionDepartment of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.en
dc.contributor.institutionQuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands.en
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorBelabbes, Abderrezaken
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