Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

Handle URI:
http://hdl.handle.net/10754/618214
Title:
Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers
Authors:
Pu, Jiang; Kanahashi, Kaito; Cuong, Nguyen Thanh; Chen, Chang-Hsiao; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Okada, Susumu; Ohta, Hiromichi; Takenobu, Taishi
Abstract:
The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers 2016, 94 (1) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
27-Jul-2016
DOI:
10.1103/PhysRevB.94.014312
Type:
Article
ISSN:
2469-9950; 2469-9969
Sponsors:
This paper was supported by the Funding Program for the Next Generation of World-Leading Researchers and Grantsin- Aid from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Grants No. 16K13618, No. 26107533, No. 26102012, and No. 25000003) (T.T.) and the Leading Graduate Program in Science and Engineering, Waseda University from MEXT (J.P. and K.K.). J.P. was also supported by the Research Fellowship for Young Scientists from JSPS. L.J.L. acknowledges support from KAUST (Saudi Arabia), the Ministry of Science and Technology, the Taiwan Consortium of Emergent Crystalline, Academia Sinica, and the Asian Office of Aerospace Research and Development (AOARD)-134137 (USA). H.O. was supported by Japan Society for the Promotion of Science-Grants-in-Aid for Scientific Research (JSPS-KAKENHI) (Grants No. 25246023 and No. 25106007) and the Asahi Glass Foundation. This paper was also supported in part by the Network Joint Research Center for Materials and Devices. S.O. was supported by JSPS-KAKENHI (Grants No. 25246010, No. 16H00898, and No. 16H06331).
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.94.014312
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorPu, Jiangen
dc.contributor.authorKanahashi, Kaitoen
dc.contributor.authorCuong, Nguyen Thanhen
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOkada, Susumuen
dc.contributor.authorOhta, Hiromichien
dc.contributor.authorTakenobu, Taishien
dc.date.accessioned2016-08-10T12:16:25Z-
dc.date.available2016-08-10T12:16:25Z-
dc.date.issued2016-07-27-
dc.identifier.citationEnhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers 2016, 94 (1) Physical Review Ben
dc.identifier.issn2469-9950-
dc.identifier.issn2469-9969-
dc.identifier.doi10.1103/PhysRevB.94.014312-
dc.identifier.urihttp://hdl.handle.net/10754/618214-
dc.description.abstractThe carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.en
dc.description.sponsorshipThis paper was supported by the Funding Program for the Next Generation of World-Leading Researchers and Grantsin- Aid from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Grants No. 16K13618, No. 26107533, No. 26102012, and No. 25000003) (T.T.) and the Leading Graduate Program in Science and Engineering, Waseda University from MEXT (J.P. and K.K.). J.P. was also supported by the Research Fellowship for Young Scientists from JSPS. L.J.L. acknowledges support from KAUST (Saudi Arabia), the Ministry of Science and Technology, the Taiwan Consortium of Emergent Crystalline, Academia Sinica, and the Asian Office of Aerospace Research and Development (AOARD)-134137 (USA). H.O. was supported by Japan Society for the Promotion of Science-Grants-in-Aid for Scientific Research (JSPS-KAKENHI) (Grants No. 25246023 and No. 25106007) and the Asahi Glass Foundation. This paper was also supported in part by the Network Joint Research Center for Materials and Devices. S.O. was supported by JSPS-KAKENHI (Grants No. 25246010, No. 16H00898, and No. 16H06331).en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.94.014312en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleEnhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japanen
dc.contributor.institutionInternational Center for Young Scientists (ICYS) and International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Ibaraki 305-0044, Japanen
dc.contributor.institutionDepartment of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwanen
dc.contributor.institutionGraduate School of Pure and Applied Science, University of Tsukuba, Ibaraki 305-8571, Japanen
dc.contributor.institutionResearch Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japanen
dc.contributor.institutionKagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo 169-0051, Japanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
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