Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

Handle URI:
http://hdl.handle.net/10754/618038
Title:
Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing
Authors:
Al-Jabr, Ahmad ( 0000-0002-3836-2184 ) ; Majid, Mohammed Abdul ( 0000-0003-2224-8982 ) ; Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap". © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KAUST Department:
Electrical Engineering; Biological and Environmental Sciences and Engineering (BESE) Division
Citation:
A. A. Al-Jabr ; M. A. Majid ; C. Shen ; T. K. Ng and B. S. Ooi " Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing ", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921B (April 28, 2016); doi:10.1117/12.2225164; http://dx.doi.org/10.1117/12.2225164
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Semiconductor Lasers and Laser Dynamics VII
Conference/Event name:
Semiconductor Lasers and Laser Dynamics VII
Issue Date:
28-Apr-2016
DOI:
10.1117/12.2225164
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2225164
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorAl-Jabr, Ahmaden
dc.contributor.authorMajid, Mohammed Abdulen
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-08-08T10:39:24Z-
dc.date.available2016-08-08T10:39:24Z-
dc.date.issued2016-04-28-
dc.identifier.citationA. A. Al-Jabr ; M. A. Majid ; C. Shen ; T. K. Ng and B. S. Ooi " Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing ", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921B (April 28, 2016); doi:10.1117/12.2225164; http://dx.doi.org/10.1117/12.2225164en
dc.identifier.doi10.1117/12.2225164-
dc.identifier.urihttp://hdl.handle.net/10754/618038-
dc.description.abstractWe increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap". © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2225164en
dc.rightsCopyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.titleRed to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixingen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineeringen
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Divisionen
dc.identifier.journalSemiconductor Lasers and Laser Dynamics VIIen
dc.conference.dateApril 03, 2016en
dc.conference.nameSemiconductor Lasers and Laser Dynamics VIIen
dc.conference.locationBrussels, Belgiumen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorAl-Jabr, Ahmaden
kaust.authorMajid, Mohammed Abdulen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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