Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

Handle URI:
http://hdl.handle.net/10754/617876
Title:
Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
Authors:
Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Elafandy, Rami T. ( 0000-0002-8529-2967 ) ; Prabaswara, Aditya ( 0000-0003-1892-671X ) ; Consiglio, Giuseppe Bernardo; Ajia, Idris A. ( 0000-0003-3156-4426 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.
KAUST Department:
Photonics Laboratory; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)
Citation:
Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics 2016, 16 (7):4616 Nano Letters
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
28-Jul-2016
DOI:
10.1021/acs.nanolett.6b01945
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01945
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Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorConsiglio, Giuseppe Bernardoen
dc.contributor.authorAjia, Idris A.en
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorShen, Chaoen
dc.contributor.authorEid, Jessicaen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-08-03T10:54:56Z-
dc.date.available2016-08-03T10:54:56Z-
dc.date.issued2016-07-28-
dc.identifier.citationDroop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics 2016, 16 (7):4616 Nano Lettersen
dc.identifier.issn1530-6984-
dc.identifier.issn1530-6992-
dc.identifier.doi10.1021/acs.nanolett.6b01945-
dc.identifier.urihttp://hdl.handle.net/10754/617876-
dc.description.abstractA droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.en
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01945en
dc.rightsThis is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License, which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes. http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.htmlen
dc.subjectefficiency droopen
dc.subjectlight-emitting diodeen
dc.subjectmolecular beam epitaxyen
dc.subjectQuantum-disks-in-nanowireen
dc.titleDroop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronicsen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalNano Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhao, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorElafandy, Rami T.en
kaust.authorPrabaswara, Adityaen
kaust.authorConsiglio, Giuseppe Bernardoen
kaust.authorAjia, Idris A.en
kaust.authorRoqan, Iman S.en
kaust.authorJanjua, Bilalen
kaust.authorShen, Chaoen
kaust.authorEid, Jessicaen
kaust.authorOoi, Boon S.en
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