Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

Handle URI:
http://hdl.handle.net/10754/617875
Title:
Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy
Authors:
Tangi, Malleswararao ( 0000-0003-1141-4324 ) ; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Anjum, Dalaver H.; Prabaswara, Aditya ( 0000-0003-1892-671X ) ; Yang, Yang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.
KAUST Department:
Photonics Laboratory; Adavanced Nanofabrication Imaging and Characterization
Citation:
Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy 2016, 120 (4):045701 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
26-Jul-2016
DOI:
10.1063/1.4959260
Type:
Article
ISSN:
0021-8979; 1089-7550
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/120/4/10.1063/1.4959260
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Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswararaoen
dc.contributor.authorMishra, Pawanen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorYang, Yangen
dc.contributor.authorAlbadri, Abdulrahman M.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-08-03T10:47:08Z-
dc.date.available2016-08-03T10:47:08Z-
dc.date.issued2016-07-26-
dc.identifier.citationBandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy 2016, 120 (4):045701 Journal of Applied Physicsen
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.doi10.1063/1.4959260-
dc.identifier.urihttp://hdl.handle.net/10754/617875-
dc.description.abstractThe dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/120/4/10.1063/1.4959260en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleBandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxyen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdavanced Nanofabrication Imaging and Characterizationen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPost-printen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorTangi, Malleswararaoen
kaust.authorMishra, Pawanen
kaust.authorJanjua, Bilalen
kaust.authorNg, Tien Kheeen
kaust.authorAnjum, Dalaver H.en
kaust.authorPrabaswara, Adityaen
kaust.authorYang, Yangen
kaust.authorOoi, Boon S.en
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