Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

Handle URI:
http://hdl.handle.net/10754/617790
Title:
Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Shaikh, Sohail F. ( 0000-0001-7640-0105 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.
KAUST Department:
Integrated Nanotechnology Lab; Integrated Disruptive Electronic Applications (IDEA) Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Citation:
Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer 2016, 6 (7):075010 AIP Advances
Publisher:
AIP Publishing
Journal:
AIP Advances
Issue Date:
15-Jul-2016
DOI:
10.1063/1.4959193
Type:
Article
ISSN:
2158-3226
Sponsors:
This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://scitation.aip.org/content/aip/journal/adva/6/7/10.1063/1.4959193
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorShaikh, Sohail F.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-08-01T10:55:12Z-
dc.date.available2016-08-01T10:55:12Z-
dc.date.issued2016-07-15-
dc.identifier.citationDesign criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer 2016, 6 (7):075010 AIP Advancesen
dc.identifier.issn2158-3226-
dc.identifier.doi10.1063/1.4959193-
dc.identifier.urihttp://hdl.handle.net/10754/617790-
dc.description.abstractIsotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.en
dc.description.sponsorshipThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST).en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/adva/6/7/10.1063/1.4959193en
dc.rightsArchived with thanks to AIP Advances. Under the Creative Commons Attribution 3.0 Unported Licenseen
dc.titleDesign criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layeren
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Divisionen
dc.identifier.journalAIP Advancesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHussain, Aftab M.en
kaust.authorShaikh, Sohail F.en
kaust.authorHussain, Muhammad Mustafaen
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