High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Handle URI:
http://hdl.handle.net/10754/617134
Title:
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer
Authors:
Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A. ( 0000-0003-3156-4426 ) ; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer 2016, 6:29747 Scientific Reports
Publisher:
Springer Nature
Journal:
Scientific Reports
Issue Date:
14-Jul-2016
DOI:
10.1038/srep29747
Type:
Article
ISSN:
2045-2322
Sponsors:
The authors thank KAUST for its financial support.
Additional Links:
http://www.nature.com/articles/srep29747
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorMumthaz Muhammed, Mufasilaen
dc.contributor.authorRoldan, M. A.en
dc.contributor.authorYamashita, Y.en
dc.contributor.authorSahonta, S.-L.en
dc.contributor.authorAjia, Idris A.en
dc.contributor.authorIizuka, K.en
dc.contributor.authorKuramata, A.en
dc.contributor.authorHumphreys, C. J.en
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2016-07-18T09:48:42Z-
dc.date.available2016-07-18T09:48:42Z-
dc.date.issued2016-07-14-
dc.identifier.citationHigh-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer 2016, 6:29747 Scientific Reportsen
dc.identifier.issn2045-2322-
dc.identifier.doi10.1038/srep29747-
dc.identifier.urihttp://hdl.handle.net/10754/617134-
dc.description.abstractWe demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.en
dc.description.sponsorshipThe authors thank KAUST for its financial support.en
dc.language.isoenen
dc.publisherSpringer Natureen
dc.relation.urlhttp://www.nature.com/articles/srep29747en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleHigh-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layeren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTamura Corporation, Sayama, Saitama 350-1328, Japanen
dc.contributor.institutionDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorMumthaz Muhammed, Mufasilaen
kaust.authorAjia, Idris A.en
kaust.authorRoqan, Iman S.en
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