Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

Handle URI:
http://hdl.handle.net/10754/614818
Title:
Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires
Authors:
Greil, J.; Assali, S.; Isono, Y.; Belabbes, Abderrezak; Bechstedt, F.; Valega Mackenzie, F. O.; Silov, A. Yu.; Bakkers, E. P. A. M.; Haverkort, J. E. M.
Abstract:
Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
KAUST Department:
Materials Science and Engineering Program
Citation:
Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires 2016, 16 (6):3703 Nano Letters
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
8-Jun-2016
DOI:
10.1021/acs.nanolett.6b01038
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
J.G. acknowledges funding by the Austrian Science Fund (FWF): Proj. No. J3540-N30. This work was supported by the Dutch Organization for Scientific Research (NWO-VICI 700.10.441).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01038
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Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorGreil, J.en
dc.contributor.authorAssali, S.en
dc.contributor.authorIsono, Y.en
dc.contributor.authorBelabbes, Abderrezaken
dc.contributor.authorBechstedt, F.en
dc.contributor.authorValega Mackenzie, F. O.en
dc.contributor.authorSilov, A. Yu.en
dc.contributor.authorBakkers, E. P. A. M.en
dc.contributor.authorHaverkort, J. E. M.en
dc.date.accessioned2016-06-27T10:31:03Z-
dc.date.available2016-06-27T10:31:03Z-
dc.date.issued2016-06-08-
dc.identifier.citationOptical Properties of Strained Wurtzite Gallium Phosphide Nanowires 2016, 16 (6):3703 Nano Lettersen
dc.identifier.issn1530-6984-
dc.identifier.issn1530-6992-
dc.identifier.doi10.1021/acs.nanolett.6b01038-
dc.identifier.urihttp://hdl.handle.net/10754/614818-
dc.description.abstractWurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.en
dc.description.sponsorshipJ.G. acknowledges funding by the Austrian Science Fund (FWF): Proj. No. J3540-N30. This work was supported by the Dutch Organization for Scientific Research (NWO-VICI 700.10.441).en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01038en
dc.rightsACS AuthorChoice - This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.htmlen
dc.subjectband structureen
dc.subjectlocalized stateen
dc.subjectphotoluminescenceen
dc.subjectstrainen
dc.subjectsymmetryen
dc.subjectWurtzite semiconductoren
dc.titleOptical Properties of Strained Wurtzite Gallium Phosphide Nanowiresen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalNano Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlandsen
dc.contributor.institutionDepartment of Mechanical Engineering, Kobe University, Kobe 657-8501, Japanen
dc.contributor.institutionInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germanyen
dc.contributor.institutionTNO Technical Sciences, De Rondom 1, 5612 AP, Eindhoven, The Netherlandsen
dc.contributor.institutionKavli Institute of Nanoscience, Delft University of Technology, 2600 GA, Delft, The Netherlandsen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorBelabbes, Abderrezaken
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