Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

Handle URI:
http://hdl.handle.net/10754/614397
Title:
Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films
Authors:
Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Javey, Ali
Abstract:
The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.
KAUST Department:
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Citation:
Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films 2016 Chemistry of Materials
Publisher:
American Chemical Society (ACS)
Journal:
Chemistry of Materials
Issue Date:
8-Jun-2016
DOI:
10.1021/acs.chemmater.6b01257
Type:
Article
ISSN:
0897-4756; 1520-5002
Sponsors:
Materials characterization and growth was supported by the Electronic Materials Program funded by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Device fabrication was supported by the Department of Energy through the Bay Area Photovoltaic Consortium under Award Number DE-EE0004946. J.-H. H. acknowledges KAUST and National Science Council of Taiwan (NSC 102-2911-I-002-552). C.M. S.-F. acknowledges financial support from the Swiss National Science Foundation (P2EZP2_155586).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.chemmater.6b01257
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Hsin-Pingen
dc.contributor.authorSutter-Fella, Carolin M.en
dc.contributor.authorLobaccaro, Peteren
dc.contributor.authorHettick, Marken
dc.contributor.authorZheng, Maxwellen
dc.contributor.authorLien, Der-Hsienen
dc.contributor.authorMiller, D. Westleyen
dc.contributor.authorWarren, Charles W.en
dc.contributor.authorRoe, Ellis Ten
dc.contributor.authorLonergan, Mark Cen
dc.contributor.authorGuthrey, Harvey L.en
dc.contributor.authorHaegel, Nancy M.en
dc.contributor.authorAger, Joel W.en
dc.contributor.authorCarraro, Carloen
dc.contributor.authorMaboudian, Royaen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorJavey, Alien
dc.date.accessioned2016-06-23T09:22:55Z-
dc.date.available2016-06-23T09:22:55Z-
dc.date.issued2016-06-08-
dc.identifier.citationIncreased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films 2016 Chemistry of Materialsen
dc.identifier.issn0897-4756-
dc.identifier.issn1520-5002-
dc.identifier.doi10.1021/acs.chemmater.6b01257-
dc.identifier.urihttp://hdl.handle.net/10754/614397-
dc.description.abstractThe thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.en
dc.description.sponsorshipMaterials characterization and growth was supported by the Electronic Materials Program funded by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Device fabrication was supported by the Department of Energy through the Bay Area Photovoltaic Consortium under Award Number DE-EE0004946. J.-H. H. acknowledges KAUST and National Science Council of Taiwan (NSC 102-2911-I-002-552). C.M. S.-F. acknowledges financial support from the Swiss National Science Foundation (P2EZP2_155586).en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.chemmater.6b01257en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.chemmater.6b01257.en
dc.titleIncreased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Filmsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Divisionen
dc.identifier.journalChemistry of Materialsen
dc.eprint.versionPost-printen
dc.contributor.institutionElectrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United Statesen
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United Statesen
dc.contributor.institutionDepartment of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, United Statesen
dc.contributor.institutionJoint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United Statesen
dc.contributor.institutionInstitute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Physics, University of Oregon, Eugene, Oregon 97403, United Statesen
dc.contributor.institutionDepartment of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United Statesen
dc.contributor.institutionNational Center for Photovoltaics (NCPV), National Renewable Energy Laboratory, Golden, Colorado 80401, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorWang, Hsin-Pingen
kaust.authorLien, Der-Hsienen
kaust.authorHe, Jr-Hauen
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