Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature

Handle URI:
http://hdl.handle.net/10754/611772
Title:
Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature
Authors:
Tizei, Luiz H. G.; Lin, Yung-Chang; Lu, Ang-Yd; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Suenaga, Kazu
Abstract:
We have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy(EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS2 below 300 K and for MoSe2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS2 and MoSe2. We discuss the effect of carbon and ice contamination in EELSspectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature 2016, 108 (16):163107 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
21-Apr-2016
DOI:
10.1063/1.4947058
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/108/16/10.1063/1.4947058
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorTizei, Luiz H. G.en
dc.contributor.authorLin, Yung-Changen
dc.contributor.authorLu, Ang-Yden
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorSuenaga, Kazuen
dc.date.accessioned2016-06-06T07:41:35Z-
dc.date.available2016-06-06T07:41:35Z-
dc.date.issued2016-04-21-
dc.identifier.citationElectron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature 2016, 108 (16):163107 Applied Physics Lettersen
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.doi10.1063/1.4947058-
dc.identifier.urihttp://hdl.handle.net/10754/611772-
dc.description.abstractWe have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy(EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS2 below 300 K and for MoSe2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS2 and MoSe2. We discuss the effect of carbon and ice contamination in EELSspectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/108/16/10.1063/1.4947058en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleElectron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperatureen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLaboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, Orsay 91405, Franceen
dc.contributor.institutionNanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLu, Ang-Yuen
kaust.authorLi, Lain-Jongen
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