Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Handle URI:
http://hdl.handle.net/10754/611530
Title:
Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis
Authors:
Maller, Robert; Porte, Yoann; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; McLachlan, Martyn
Abstract:
The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.
KAUST Department:
Materials Science and Engineering (MSE)
Citation:
Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis 2016 J. Mater. Chem. C
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
24-May-2016
DOI:
10.1039/C5TC03636D
Type:
Article
ISSN:
2050-7526; 2050-7534
Sponsors:
The authors gratefully acknowledge the KAUST-Imperial College Academic Excellence Alliance for financial support. The authors thank Dr D Payne (Imperial) for useful discussions in revision of the manuscript.
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C5TC03636D
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorMaller, Roberten
dc.contributor.authorPorte, Yoannen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorMcLachlan, Martynen
dc.date.accessioned2016-06-02T12:34:02Z-
dc.date.available2016-06-02T12:34:02Z-
dc.date.issued2016-05-24-
dc.identifier.citationProbing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis 2016 J. Mater. Chem. Cen
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.doi10.1039/C5TC03636D-
dc.identifier.urihttp://hdl.handle.net/10754/611530-
dc.description.abstractThe measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.en
dc.description.sponsorshipThe authors gratefully acknowledge the KAUST-Imperial College Academic Excellence Alliance for financial support. The authors thank Dr D Payne (Imperial) for useful discussions in revision of the manuscript.en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C5TC03636Den
dc.rightsArchived with thanks to J. Mater. Chem. Cen
dc.titleProbing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysisen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.identifier.journalJ. Mater. Chem. Cen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlshareef, Husam N.en
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