Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

Handle URI:
http://hdl.handle.net/10754/611336
Title:
Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control
Authors:
Serna, Martha I.; Yoo, Seong H.; Moreno, Salvador; Xi, Yang; Oviedo, Juan Pablo; Choi, Hyunjoo; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Kim, Moon J.; Minary-Jolandan, Majid; Quevedo-Lopez, Manuel A.
Abstract:
A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control 2016 ACS Nano
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
24-May-2016
DOI:
10.1021/acsnano.6b01636
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
The Authors want to thank the National Science Foundation- Division of Electrical, Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and The Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP) (Grant 2013K1A4A3055679).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.6b01636
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSerna, Martha I.en
dc.contributor.authorYoo, Seong H.en
dc.contributor.authorMoreno, Salvadoren
dc.contributor.authorXi, Yangen
dc.contributor.authorOviedo, Juan Pabloen
dc.contributor.authorChoi, Hyunjooen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorKim, Moon J.en
dc.contributor.authorMinary-Jolandan, Majiden
dc.contributor.authorQuevedo-Lopez, Manuel A.en
dc.date.accessioned2016-06-01T06:50:49Z-
dc.date.available2016-06-01T06:50:49Z-
dc.date.issued2016-05-24-
dc.identifier.citationLarge Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control 2016 ACS Nanoen
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.doi10.1021/acsnano.6b01636-
dc.identifier.urihttp://hdl.handle.net/10754/611336-
dc.description.abstractA scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.en
dc.description.sponsorshipThe Authors want to thank the National Science Foundation- Division of Electrical, Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and The Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP) (Grant 2013K1A4A3055679).en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.6b01636en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.6b01636.en
dc.titleLarge Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Controlen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Science and Engineering Department, The University of Texas at Dallas, Richardson TX 75080. USAen
dc.contributor.institutionDepartment of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702, South Koreaen
dc.contributor.institutionDepartment of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080. USAen
dc.contributor.institutionAlan G. MacDiarmid NanoTech Institute, The University of Texas at Dallas, Richardson, TX 75080. USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlshareef, Husam N.en
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