Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

Handle URI:
http://hdl.handle.net/10754/611224
Title:
Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices
Authors:
Alhashim, Hala H. ( 0000-0002-8779-1743 )
Abstract:
The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in conjunction with anti-reflection coating and tilted ridge-waveguide device configuration. In this regard, we achieved 125 nm linewidth from InGaAsP/InP multiple quantum well (MQW) superluminescent diode with a total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm, and a spectral ripple of ≤1.2 ± 0.5 dB. The high power and broadband SLD with flat-top emission spectrum is a desirable as optical source for noninvasive biomedical imaging techniques employing low coherence interferometry, for instance, optical coherence tomography (OCT).
Advisors:
Ooi, Boon S. ( 0000-0001-9606-5578 )
Committee Member:
Beaujuge, Pierre; Rothenberger, Alexander; Aimez, Vincent
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Program:
Materials Science and Engineering
Issue Date:
29-May-2016
Type:
Dissertation
Appears in Collections:
Dissertations; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.advisorOoi, Boon S.en
dc.contributor.authorAlhashim, Hala H.en
dc.date.accessioned2016-05-31T11:36:03Z-
dc.date.available2016-05-31T11:36:03Z-
dc.date.issued2016-05-29-
dc.identifier.urihttp://hdl.handle.net/10754/611224-
dc.description.abstractThe main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in conjunction with anti-reflection coating and tilted ridge-waveguide device configuration. In this regard, we achieved 125 nm linewidth from InGaAsP/InP multiple quantum well (MQW) superluminescent diode with a total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm, and a spectral ripple of ≤1.2 ± 0.5 dB. The high power and broadband SLD with flat-top emission spectrum is a desirable as optical source for noninvasive biomedical imaging techniques employing low coherence interferometry, for instance, optical coherence tomography (OCT).en
dc.language.isoenen
dc.subjectSemiconductor Laseren
dc.subjectQuantum Well Intermixing (QWI)en
dc.subjectquantum Dotsen
dc.subjectPhotoluminescenceen
dc.subjectSuperluminescent Diodesen
dc.subjectPhotonic Integrationen
dc.titleBandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devicesen
dc.typeDissertationen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberBeaujuge, Pierreen
dc.contributor.committeememberRothenberger, Alexanderen
dc.contributor.committeememberAimez, Vincenten
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.nameDoctor of Philosophyen
dc.person.id118844en
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