Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

Handle URI:
http://hdl.handle.net/10754/610712
Title:
Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.
KAUST Department:
Integrated Nanotechnology Lab; Integrated Disruptive Electronic Applications (IDEA) Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS 2016:1 IEEE Transactions on Electron Devices
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Electron Devices
Issue Date:
18-May-2016
DOI:
10.1109/TED.2016.2561239
Type:
Article
ISSN:
0018-9383; 1557-9646
Sponsors:
This work was supported by the King Abdullah University of Science and Technology within the Office of Sponsored Research under Award CRG-1-2012-HUS-008. The review of this paper was arranged by Editor R. Huang.
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7471458
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorTorres-Sevilla, Galo A.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2016-05-25T13:51:17Z-
dc.date.available2016-05-25T13:51:17Z-
dc.date.issued2016-05-18-
dc.identifier.citationOut-of-Plane Strain Effects on Physically Flexible FinFET CMOS 2016:1 IEEE Transactions on Electron Devicesen
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.doi10.1109/TED.2016.2561239-
dc.identifier.urihttp://hdl.handle.net/10754/610712-
dc.description.abstractWe present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.en
dc.description.sponsorshipThis work was supported by the King Abdullah University of Science and Technology within the Office of Sponsored Research under Award CRG-1-2012-HUS-008. The review of this paper was arranged by Editor R. Huang.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7471458en
dc.rights(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectComplementary-metal-oxide-semiconductor (CMOS)en
dc.subjectFinFETen
dc.subjectFlexibleen
dc.subjectstrain.en
dc.titleOut-of-Plane Strain Effects on Physically Flexible FinFET CMOSen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Transactions on Electron Devicesen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorGhoneim, Mohamed T.en
kaust.authorAlfaraj, Nasiren
kaust.authorSevilla, Galo T.en
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Muhammad Mustafaen
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