Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

Handle URI:
http://hdl.handle.net/10754/606953
Title:
Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors
Authors:
Omran, Hesham ( 0000-0002-0117-7364 ) ; Alahmadi, Hamzah; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors 2016:1 IEEE Transactions on Circuits and Systems I: Regular Papers
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Circuits and Systems I: Regular Papers
Issue Date:
21-Apr-2016
DOI:
10.1109/TCSI.2016.2537824
Type:
Article
ISSN:
1549-8328; 1558-0806
Sponsors:
This work was supported by the Advanced Membranes and Porous Materials Center (AMPMC) under grant FCC/1/1972-05-01 and by King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7457630
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorOmran, Heshamen
dc.contributor.authorAlahmadi, Hamzahen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2016-04-25T13:53:53Zen
dc.date.available2016-04-25T13:53:53Zen
dc.date.issued2016-04-21en
dc.identifier.citationMatching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors 2016:1 IEEE Transactions on Circuits and Systems I: Regular Papersen
dc.identifier.issn1549-8328en
dc.identifier.issn1558-0806en
dc.identifier.doi10.1109/TCSI.2016.2537824en
dc.identifier.urihttp://hdl.handle.net/10754/606953en
dc.description.abstractSmall metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.en
dc.description.sponsorshipThis work was supported by the Advanced Membranes and Porous Materials Center (AMPMC) under grant FCC/1/1972-05-01 and by King Abdullah University of Science and Technology (KAUST).en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7457630en
dc.rightsArchived with thanks to IEEE Transactions on Circuits and Systems I: Regular Papers. This item is Open Access.en
dc.subjectAnalog-to-digital converter (ADC)en
dc.subjectcapacitance-to-digital converter (CDC)en
dc.subjectcapacitive digital-to-analog converter (CapDAC)en
dc.subjectcapacitor mismatchen
dc.subjectenergy-efficient circuitsen
dc.subjectmetal-oxide-metal (MOM) capacitorsen
dc.subjectmismatch characterizationen
dc.subjectprogrammable capacitor array (PCA)en
dc.titleMatching Properties of Femtofarad and Sub-Femtofarad MOM Capacitorsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Transactions on Circuits and Systems I: Regular Papersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907 USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOmran, Heshamen
kaust.authorAlahmadi, Hamzahen
kaust.authorN. Salama, Khaleden
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