InGaN/GaN Nanowire LEDs and Lasers

Handle URI:
http://hdl.handle.net/10754/606856
Title:
InGaN/GaN Nanowire LEDs and Lasers
Authors:
Zhao, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Jahangir, Shafat; Frost, Thomas; Bhattacharya, Pallab; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
KAUST Department:
Photonics Laboratory
Conference/Event name:
16th International Conference on Numerical Simulation of Optoelectronic Devices
Issue Date:
2016
Type:
Conference Paper
Appears in Collections:
Conference Papers; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorFrost, Thomasen
dc.contributor.authorBhattacharya, Pallaben
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-04-24T06:47:16Zen
dc.date.available2016-04-24T06:47:16Zen
dc.date.issued2016en
dc.identifier.urihttp://hdl.handle.net/10754/606856en
dc.description.abstractThe large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.en
dc.subjectInGaN/GaN quantum-disks-in-nanowireen
dc.subjectlight-emitting diodesen
dc.subjectlaseren
dc.subjectMolecular Beam Epitaxyen
dc.titleInGaN/GaN Nanowire LEDs and Lasersen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.conference.date11-15 July 2016en
dc.conference.name16th International Conference on Numerical Simulation of Optoelectronic Devicesen
dc.conference.locationSydney, Australiaen
dc.eprint.versionPre-printen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michiganen
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