In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

Handle URI:
http://hdl.handle.net/10754/605000
Title:
In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition
Authors:
Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel
Abstract:
In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.
KAUST Department:
Materials Science
Citation:
In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition 2016 Thin Solid Films
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
9-Apr-2016
DOI:
10.1016/j.tsf.2016.04.010
Type:
Article
ISSN:
00406090
Sponsors:
Author would like to thank CONACYT for partial financial support for this project.
Additional Links:
http://linkinghub.elsevier.com/retrieve/pii/S0040609016300694
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorAvila-Avendano, Jesusen
dc.contributor.authorMejia, Israelen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorYoung, Chadwinen
dc.contributor.authorQuevedo-Lopez, Manuelen
dc.date.accessioned2016-04-11T12:18:40Zen
dc.date.available2016-04-11T12:18:40Zen
dc.date.issued2016-04-09en
dc.identifier.citationIn-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition 2016 Thin Solid Filmsen
dc.identifier.issn00406090en
dc.identifier.doi10.1016/j.tsf.2016.04.010en
dc.identifier.urihttp://hdl.handle.net/10754/605000en
dc.description.abstractIn this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.en
dc.description.sponsorshipAuthor would like to thank CONACYT for partial financial support for this project.en
dc.language.isoenen
dc.publisherElsevier BVen
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S0040609016300694en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, 9 April 2016. DOI: 10.1016/j.tsf.2016.04.010en
dc.subjectCadmium tellurideen
dc.subjectpulsed laser depositionen
dc.subjectheterojunctionsen
dc.titleIn-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Depositionen
dc.typeArticleen
dc.contributor.departmentMaterials Scienceen
dc.identifier.journalThin Solid Filmsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, 800, West, Campbell Road, RL10 Richardson, TX, USA 75080en
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlshareef, Husam N.en
kaust.authorGuo, Zaibingen
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