Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Handle URI:
http://hdl.handle.net/10754/604979
Title:
Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions
Authors:
Huang, Yi-Jen; Chao, Shih-Chun; Lien, Der-Hsien; Wen, Cheng-Yen; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Lee, Si-Chen
Abstract:
The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions 2016, 6:23945 Scientific Reports
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
7-Apr-2016
DOI:
10.1038/srep23945
Type:
Article
ISSN:
2045-2322
Sponsors:
The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.
Additional Links:
http://www.nature.com/articles/srep23945
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Yi-Jenen
dc.contributor.authorChao, Shih-Chunen
dc.contributor.authorLien, Der-Hsienen
dc.contributor.authorWen, Cheng-Yenen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorLee, Si-Chenen
dc.date.accessioned2016-04-10T13:44:00Zen
dc.date.available2016-04-10T13:44:00Zen
dc.date.issued2016-04-07en
dc.identifier.citationDual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions 2016, 6:23945 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep23945en
dc.identifier.urihttp://hdl.handle.net/10754/604979en
dc.description.abstractThe combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.en
dc.description.sponsorshipThe authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/articles/srep23945en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleDual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ionsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionGraduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10617, Taiwanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHe, Jr-Hauen
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