Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing

Handle URI:
http://hdl.handle.net/10754/604976
Title:
Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing
Authors:
Al-Jabr, Ahmad ( 0000-0002-3836-2184 ) ; Majid, Mohammed A.; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Anjum, Dalaver H.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on a novel quantum well intermixing (QWI) technique that induces a large degree of bandgapblueshift in the InGaP/InAlGaP laser structure. In this technique, high external compressive strain induced by a thick layer of SiO2 cap with a thickness ≥1 μm was used to enhance QWI in the tensile-strained InGaP/InAlGaP quantum well layer. A bandgapblueshift as large as 200 meV was observed in samples capped with 1-μm SiO2 and annealed at 1000 °C for 120 s. To further enhance the degree of QWI, cycles of annealing steps were applied to the SiO2 cap. Using this method, wavelength tunability over the range of 640 nm to 565 nm (∼250 meV) was demonstrated. Light-emitting diodes emitting at red (628 nm), orange (602 nm), and yellow (585 nm) wavelengths were successfully fabricated on the intermixed samples. Our results show that this new QWI method technique may pave the way for the realization of high-efficiency orange and yellow light-emitting devices based on the InGaP/InAlGaP material system.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing 2016, 119 (13):135703 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
4-Apr-2016
DOI:
10.1063/1.4945104
Type:
Article
ISSN:
0021-8979; 1089-7550
Sponsors:
The authors gratefully acknowledge the financial support from the KAUST baseline funding, the Competitive Research Grant (CRG), and the KACST Technology Innovation Center for Solid State Lighting at KAUST.
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/119/13/10.1063/1.4945104
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorAl-Jabr, Ahmaden
dc.contributor.authorMajid, Mohammed A.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2016-04-10T13:38:52Zen
dc.date.available2016-04-10T13:38:52Zen
dc.date.issued2016-04-04en
dc.identifier.citationLarge bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing 2016, 119 (13):135703 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4945104en
dc.identifier.urihttp://hdl.handle.net/10754/604976en
dc.description.abstractWe report on a novel quantum well intermixing (QWI) technique that induces a large degree of bandgapblueshift in the InGaP/InAlGaP laser structure. In this technique, high external compressive strain induced by a thick layer of SiO2 cap with a thickness ≥1 μm was used to enhance QWI in the tensile-strained InGaP/InAlGaP quantum well layer. A bandgapblueshift as large as 200 meV was observed in samples capped with 1-μm SiO2 and annealed at 1000 °C for 120 s. To further enhance the degree of QWI, cycles of annealing steps were applied to the SiO2 cap. Using this method, wavelength tunability over the range of 640 nm to 565 nm (∼250 meV) was demonstrated. Light-emitting diodes emitting at red (628 nm), orange (602 nm), and yellow (585 nm) wavelengths were successfully fabricated on the intermixed samples. Our results show that this new QWI method technique may pave the way for the realization of high-efficiency orange and yellow light-emitting devices based on the InGaP/InAlGaP material system.en
dc.description.sponsorshipThe authors gratefully acknowledge the financial support from the KAUST baseline funding, the Competitive Research Grant (CRG), and the KACST Technology Innovation Center for Solid State Lighting at KAUST.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/119/13/10.1063/1.4945104en
dc.rightsThe authors gratefully acknowledge the financial support from the KAUST baseline funding, the Competitive Research Grant (CRG), and the KACST Technology Innovation Center for Solid State Lighting at KAUST.en
dc.titleLarge bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixingen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAl-Jabr, A. A.en
kaust.authorMajid, M. A.en
kaust.authorAlias, M. S.en
kaust.authorAnjum, Dalaver H.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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