Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

Handle URI:
http://hdl.handle.net/10754/601362
Title:
Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods
Authors:
Conroy, Michele Ann; Li, Haoning; Kusch, Gunnar; Zhao, Chao ( 0000-0002-9582-1068 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Paul, Edwards; Martin, Robert; Holmes, Justin D.; Parbrook, Peter
Abstract:
We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.
KAUST Department:
Photonics Laboratory
Citation:
Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods 2016 Nanoscale
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
Issue Date:
10-Mar-2016
DOI:
10.1039/C6NR00116E
Type:
Article
ISSN:
2040-3364; 2040-3372
Sponsors:
This research was enabled by the Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by Science Foundation Ireland (SFI) under Grant no. SFI/10/IN.1/I2993. PJP acknowledges funding from SFI Engineering Professorship scheme (07/EN/E001A) and MC acknowledges PhD research scholarship from INSPIRE. This work was conducted under the framework of the Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund. RWM and GK acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) (EP/M003132/1) of the UK. We also acknowledge the support of Duc V. Dinh for his help with the PL spectra and William Jagoe for his illustrations in the article.
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR00116E
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorConroy, Michele Annen
dc.contributor.authorLi, Haoningen
dc.contributor.authorKusch, Gunnaren
dc.contributor.authorZhao, Chaoen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorPaul, Edwardsen
dc.contributor.authorMartin, Roberten
dc.contributor.authorHolmes, Justin D.en
dc.contributor.authorParbrook, Peteren
dc.date.accessioned2016-03-15T13:54:51Zen
dc.date.available2016-03-15T13:54:51Zen
dc.date.issued2016-03-10en
dc.identifier.citationSite controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods 2016 Nanoscaleen
dc.identifier.issn2040-3364en
dc.identifier.issn2040-3372en
dc.identifier.doi10.1039/C6NR00116Een
dc.identifier.urihttp://hdl.handle.net/10754/601362en
dc.description.abstractWe report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.en
dc.description.sponsorshipThis research was enabled by the Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by Science Foundation Ireland (SFI) under Grant no. SFI/10/IN.1/I2993. PJP acknowledges funding from SFI Engineering Professorship scheme (07/EN/E001A) and MC acknowledges PhD research scholarship from INSPIRE. This work was conducted under the framework of the Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund. RWM and GK acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) (EP/M003132/1) of the UK. We also acknowledge the support of Duc V. Dinh for his help with the PL spectra and William Jagoe for his illustrations in the article.en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR00116Een
dc.rightsArchived with thanks to Nanoscaleen
dc.titleSite controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rodsen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalNanoscaleen
dc.eprint.versionPost-printen
dc.contributor.institutionTyndall National Institute, Dyke Parade, Cork City, Irelanden
dc.contributor.institutionSchool of Engineering, University College Cork, Cork City, Irelanden
dc.contributor.institutionDepartment of Chemistry, University College Cork, Cork City, Irelanden
dc.contributor.institutionAMBER@CRANN, Trinity College Dublin, Dublin City, Irelanden
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, U.K.en
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhao, Chaoen
kaust.authorOoi, Boon S.en
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